MTB032P06V8

CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06V8
Description
BVDSS
ID
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
-60V
-25A
29mΩ(typ)
33mΩ(typ)
The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB032P06V8
DFN3×3
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
MTB032P06V8-0-T6-G
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB032P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=-10V
Continuous Drain Current @ TC=100C, VGS=-10V
Continuous Drain Current @ TA=25C, VGS=-10V
Continuous Drain Current @ TA=70C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
-60
±25
-25
-16
-6.6
-5.3
-40 *1
-10
5
2.5 *2
36
14
2.5 *3
1.6 *3
-55~+150
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.5
50 *3
Unit
C/W
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
*1
GFS
Dynamic
Ciss
Coss
Crss
*1
MTB032P06V8
Min.
Typ.
Max.
-60
-0.8
-
-1.1
29
33
18
-2.5
±100
-1
-25
38
45
-
-
2827
109
70
-
Unit
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0
VDS=-48V, VGS=0
VDS=-48V, VGS=0, Tj=125°C
VGS=-10V, ID=-6A
VGS=-4.5V ID=-4A
VDS=-5V, ID=-6A
pF
VDS=-30V, VGS=0, f=1MHz
V
nA
μA
m
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified)
Symbol
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Source-Drain Diode
VSD *1
trr
Qrr
Min.
-
Typ.
18
12
99
35
32
8
10
Max.
-
Unit
-
-0.74
75
98
-1
-
Test Conditions
ns
VDS=-30V, ID=-6A, VGS=-10V,
RG=6Ω
nC
VDS=-48V, ID=-6A, VGS=-10V
V
ns
nC
IS=-3A, VGS=0V
IF=6A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB032P06V8
CYStek Product Specification
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
40
35
-VGS=3V
-ID, Drain Current (A)
30
25
10V, 9V, 8V, 7V, 6V, 5V, 4V
20
15
10
-VGS=2V
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
5
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-2V
VGS=-2.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4.5V
VGS=-10V
100
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IDR, Reverse Drain Current (A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
120
60
ID=-6A
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
80
60
40
20
VGS=-10V, ID=-6A
50
40
30
20
10
RDS(ON) @Tj=25°C : 25 mΩ typ.
0
0
0
MTB032P06V8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 5/9
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
10000
-VGS(th) ,Normalized Threshold
Voltage
Capacitance---(pF)
Ciss
1000
Coss
100
Crss
ID=-250μA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
100
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
VDS=-48V
ID=-6A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
Maximum Safe Operating Area
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs JunctionTemperature
100
-ID, Maximum Drain Current(A)
8
RDS(ON)
Limite
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
100μs
10
1ms
10ms
1
100m
TA=25°C, Tj=150°C
VGS=-10V, RθJA=50°C/W
Single Pulse
0.1
1s
DC
0.01
7
6
5
4
3
2
1
TA=25°C, VGS=-10V,θJA=50°C/W
0
0.01
MTB032P06V8
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
40
350
VDS=-10V
35
300
Power (W)
250
-ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
RθJA=50°C/W
200
150
100
50
30
25
20
15
10
5
0
0.0001
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
6
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB032P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB032P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB032P06V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date : 2014.08.11
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
Date
Code
D D
B032
P06
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Inches
Min.
Max.
0.0276
0.0354
0.0000
0.0197
0.0094
0.0138
0.0039
0.0079
0.1280
0.1339
0.1201
0.1280
0.0945
0.1024
DIM
A
A1
b
c
D
D1
D2
Millimeters
Min.
Max.
0.70
0.90
0.00
0.50
0.24
0.35
0.10
0.20
3.25
3.40
3.05
3.25
2.40
2.60
DIM
E
E1
e
H
L
L1
L2
Inches
Min.
Max.
0.1181
0.1260
0.0531
0.0610
0.0256 BSC
0.1260
0.1339
0.0118
0.0197
0.0039
0.0079
0.0445 REF
Millimeters
Min.
Max.
3.00
3.20
1.35
1.55
0.65 BSC
3.20
3.40
0.30
0.50
0.10
0.20
1.13 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB032P06V8
CYStek Product Specification