MTN2302S3 BVDSS

Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302S3
BVDSS
ID@VGS=10V, TA=25°C
20V
RDSON(MAX)@VGS=4.5V, ID=3.6A
2.9A
55mΩ(typ.)
RDSON(MAX)@VGS=2.5V, ID=3.1A
65mΩ(typ.)
Features
• Simple drive requirement
• Small package outline
• Capable of 2.5V gate drive
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN2302S3
SOT-323
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN2302S3-0-T1-G
Package
Shipping
SOT-323
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 4)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 4)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Symbol
VDS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature
Limits
20
±12
2.9
2.3
2.3
1.8
30
0.7 (Note 3)
Tj, Tstg
Unit
V
A
W
0.43 (Note 4)
-55~+150
°C
Limit
Unit
Thermal Performance
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient, max
(Note 3)
Thermal Resistance, Junction-to-Ambient, max
(Note 4)
Thermal Resistance, Junction-to-Case, max
178
RθJA
290
RθJC
°C/W
90
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, 2 oz. copper.
4. Surface mounted on minimum copper pad, 2 oz. copper.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
MTN2302S3
Min.
Typ.
Max.
Unit
20
0.5
-
0.02
55
65
4
1.2
±100
1
10
66
85
-
V
V/°C
V
nA
-
440
61
59
-
Test Conditions
S
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS=VGS, ID=250μA
VGS=±12V, VDS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V (Tj=70°C)
ID=2A, VGS=4.5V
ID=2A, VGS=2.5V
VDS=5V, ID=2A
pF
VDS=10V, VGS=0V, f=1MHz
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
IS
ISM
-
4.5
7.4
19
7.2
4.4
0.7
1.7
-
-
0.8
-
1.2
1
10
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 3/9
ns
VDS=10V, ID=2A, VGS=5V
RG=6Ω, RD=2.8Ω
nC
VDS=10V, ID=2A, VGS=4.5V
V
VGS=0V, IS=1.6A
A
VD=VG=0V, VS=1.2V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTN2302S3
CYStek Product Specification
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
4.5V
3.5V
3V
2.5V
ID, Drain Current(A)
8
RDS(on) , Normalized Static Drain-Source
On-state Resistance
10
VGS=2V
6
4
VGS=1.5V
2
1.8
1.6
ID=2A, VGS=4.5V
1.4
1.2
1
0.8
0.6
0.4
RDSON@Tj=25°C : 55mΩ typ.
0.2
0
0
0
0.5
1
1.5
2
2.5
-60
3
-20
VDS, Drain-Source Voltage(V)
1000
10000
VGS=1.5V
VGS=2V
IF, Forward Drain Current(mA)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
180
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
100
VGS=4.5V
Tj=25°C
VGS=0V
1000
100
10
1
10
1
10
100
1000
ID, Drain Current(mA)
0.4
10000
TA=25°C
ID=2A
Ciss
Capacitance-(pF)
400
1.4
1000
500
450
0.6
0.8
1
1.2
VSD, Source Drain Voltage(V)
Capacitance vs Reverse Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on), Static Drain-Source OnState Resistance(mΩ)
20
60
100
140
TA, Ambient Temperature(°C)
350
300
250
200
150
100
Coss
Crss
100
f=1MHz
50
10
0
0
MTN2302S3
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
2
4
6
8 10 12 14 16
VDS , Drain-to-Source Voltage(V)
18
20
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Gate Threshold Voltage vs Ambient Temperature
Maximum Safe Operating Area
RDS(ON)
Limited
10
ID, Drain Current (A)
VGS(th) , Normalized Gate SourceThreshold
Voltage
100
100μs
1ms
1
10ms
Ta=25°C, RθJA=178°C/W ,
VGS=10V, Tj=150°C
Single pulse
0.1
100ms
1s
DC
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
0.2
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
Maximum Drain Current vs Junction Temperature
Gate Charge Characteristics
10
4.5
ID, Maximum Drain Current(A)
4
VGS, Gate-Source Voltage(V)
8
VDS=10V
ID=2A
6
4
2
0
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=178°C/W
0.5
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
25
75
100
125
Tj, Junction Temperature(°C)
150
175
Brekdown Voltage vs Ambient Temperature
Drain Current vs Gate-Source Voltage
10
1.4
9
BVDSS, Normalized Drain-Source
Breakdown Voltage
VDS=3V
TA=25°C
8
ID, Drain Current(A)
50
7
6
5
4
3
2
1.3
1.2
1.1
1
0.9
0.8
ID=250μA,
VGS=0V
0.7
1
0
0
MTN2302S3
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0.6
-100
-50
0
50
100
150
Tj, Junction Temperature(°C)
200
CYStek Product Specification
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
Power Derating Curve
30
800
Mounted on a FR-4 board, 2 oz.
copper, with area of 1 in × 1 in
600
25
Power (W)
PD, Power Dissipation(mW)
700
500
400
300
TJ(MAX) =150°C
TA=25°C
RθJA=178°C/W
20
15
10
200
5
100
0
0
50
100
150
TA, Ambient Temperature(℃)
0
0.001
200
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
0.1
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.Rθ JA=178 °C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1, Square Wave Pulse Duration(s)
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2302S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 9/9
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
2302
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
Style: Pin 1.Gate 2.Source 3.Drain
2 mm
1
scale
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2302S3
CYStek Product Specification