MTB60N06L3

Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 1/8
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB60N06L3
BVDSS
60V
ID
RDSON@VGS=10V, ID=5A
5.9A
41mΩ (typ)
RDSON@VGS=4.5V, ID=3A
46mΩ (typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTB60N06L3
SOT-223
D
S
D
G：Gate D：Drain
S：Source
G
Ordering Information
Device
MTB60N06L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB60N06L3
Preliminary
CYStek Product Specification
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
TA=25℃
Total Power Dissipation *2
TA=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
60
±20
5.9
3.7
30
2.7
1.1
-55~+150
ID
IDM
Pd
Tj, Tstg
Unit
V
A
W
°C
2
*2. Surface mounted on a 1 in pad of 2 oz. copper, t≤10s.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
14
45 (Note)
Unit
°C/W
°C/W
2
Note : Surface mounted on a 1 in pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
MTB60N06L3
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
-
1.8
9
41
46
3
±100
1
25
50
60
V
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=5A
VGS=±20, VDS=0
VDS =60V, VGS =0
VDS =48V, VGS =0, Tj=70°C
VGS =10V, ID=5A
VGS =4.5V, ID=3A
-
22
3.2
7.6
6.4
9
30
6
1128
42
32
2.5
-
nC
ID=5A, VDS=48V, VGS=10V
ns
VDS=30V, ID=5A, VGS=10V,
RG=3.3Ω
pF
VGS=0V, VDS=30V, f=1MHz
Ω
VGS=15mV, VDS=0, f=1MHz
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
25
45
2.3
9.2
1.3
-
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 3/8
A
V
ns
nC
IF=IS, VGS=0V
IF=5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB60N06L3
Preliminary
CYStek Product Specification
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V,6V,5V
ID, Drain Current (A)
25
VGS=4V
20
15
10
VGS=3V
5
1.2
1
0.8
0.6
0.4
-100
0
0
8
2
4
6
VDS, Drain-Source Voltage(V)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
200
1.2
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
10000
VGS=3V
VGS=2.5V
100
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
400
360
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
320
1.6
280
240
VGS=4.5V, ID=3A
1.2
200
160
120
ID=5A
ID=3A
80
0.8
VGS=10V, ID=5A
40
0.4
0
0
MTB60N06L3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
Preliminary
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
Gate Charge Characteristics
100
10
VDS=15V
10
1
8
VGS , Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=5V
Pulsed
Ta=25°C
VDS=30V
6
VDS=48V
4
2
ID=5A
0
0.1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
8
12
16
Qg, Total Gate Charge(nC)
20
24
7
RDSON
Limited
ID, Maximum Drain Current(A)
100
10
4
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current (A)
20
10μs
100μs
1
1ms
10ms
TC=25°C, Tj=150°C
VGS=10V, RθJA=45°C/W
Single Pulse
0.1
100ms
DC
6
5
4
3
2
TA=25°C
VGS=10V
RθJA=45°C/W
1
0
0.01
0.1
MTB60N06L3
1
10
VDS, Drain-Source Voltage(V)
100
25
50
Preliminary
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 6/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
40
VDS=5V
TJ(MAX) =150°C
TA=25°C
θJA=45°C/W
40
30
Power (W)
ID, Drain Current(A)
35
25
20
15
10
30
20
10
5
0
0.0001
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=120°C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
MTB60N06L3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 7/8
Reel Dimension
Carrier Tape Dimension
MTB60N06L3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 8/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB60N06L3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 9/8
SOT-223 Dimension
A
Marking:
B
Device Name
C
1
2
Date Code
3
D
E
F
H
G
Style: Pin 1.Gate 2.Drain 3.Source
a1
I
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
a2
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
0o
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
0o
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB60N06L3
Preliminary
CYStek Product Specification