MTDA0N10L3

CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTDA0N10L3
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=5V, ID=2A
100V
3.9A
77mΩ(typ)
87mΩ(typ)
Description
The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTDA0N10L3
SOT-223
D
S
D
G
G：Gate
D：Drain S：Source
Ordering Information
Device
MTDA0N10L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDA0N10L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V,TC=70°C
Continuous Drain Current @VGS=10V,TA=25°C
Continuous Drain Current @VGS=10V,TA=70°C
Pulsed Drain Current
TC=25℃
TC=70℃
Total Power Dissipation
TA=25℃
TA=70℃
Symbol
Limits
VDS
VGS
Tj, Tstg
100
±20
7.0
5.6
3.9
3.2
20 *1
10
6.4
3.1
2.0
-55~+150
°C
Symbol
Rth,j-c
Rth,j-a
Value
12
40 *3
Unit
°C/W
°C/W
ID
IDM
PD
Operating Junction and Storage Temperature Range
Unit
V
A
W
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 120°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
ΔVGS(th)/ΔTj
GFS *1
IGSS
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTDA0N10L3
*1
Min.
Typ.
Max.
Unit
100
1.5
-
0.1
2.2
-6
8
77
87
3.0
±100
1
25
105
120
V
V/°C
V
mV/°C
S
nA
-
396
55
23
-
μA
mΩ
mΩ
pF
Test Conditions
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
Reference to 25°C, ID=250μA
VDS =5V, ID=3A
VGS=±20V
VDS =100V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
VGS =10V, ID=3A
VGS =5V, ID=2A
VGS=0V, VDS=25V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
11
1.5
3.5
8
15
15
7
Max.
-
-
0.81
30
25
3.9
20
1.3
-
Unit
Test Conditions
nC
VDS=80V, VGS=10V, ID=3A
ns
VDS=50V, ID=1A, VGS=10V, RGS=6Ω
A
V
ns
nC
IS=3A, VGS=0V
IF=3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTDA0N10L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V
ID, Drain Current (A)
16
12
VGS=4V
8
4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=4.5V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
2.4
ID=3A
360
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
320
280
240
200
160
120
80
2
VGS=10V, ID=3A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 77mΩ
40
0
0
0
MTDA0N10L3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=80V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
VDS=50V
8
VDS=20V
6
4
2
ID=3A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
6
8
Qg, Total Gate Charge(nC)
10
12
5
ID, Maximum Drain Current(A)
100
10
2
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
RDSON
Limited
10μs
1
100μs
1ms
0.1
TA=25°C, Tj=150°C
VGS=10V, θJA=40°C/W
Single Pulse
10ms
100ms
DC
4.5
4
3.5
3
2.5
2
1.5
1
VGS=10V, RθJA=40°C/W
0.5
0
0.01
0.1
MTDA0N10L3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100 125 150
Tj, Junction Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
300
Peak Transient Power (W)
20
ID, Drain Current(A)
16
12
8
4
250
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
200
150
100
50
VDS=10V
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
0
1E-05 0.0001 0.001
0.01
0.1
Pulse Width(s)
1
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
MTDA0N10L3
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTDA0N10L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDA0N10L3
CYStek Product Specification
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
B
Device Name
C
1
2
DA0N10
Date Code
3
D
E
F
H
G
Style: Pin 1.Gate 2.Drain 3.Source
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
o
0
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
o
0
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDA0N10L3
CYStek Product Specification