Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 1/13 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC8958G6 BVDSS ID RDSON(TYP.) N-CH 30V 6A(VGS=10V) 18mΩ(VGS=10V) 26mΩ(VGS=4.5V) P-CH -30V -4.5A(VGS=-10 V) 41mΩ(VGS=-10V) 60mΩ(VGS=-4.5V) Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit Outline MTC8958G6 TSOP-6 D1 S1 G：Gate S：Source D：Drain D2 G1 S2 G2 Ordering Information Device MTC8958G6-0-T1-G Package TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTC8958G6 CYStek Product Specification Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 2/13 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage TA=25°C ,VGS=10V(N-CH), Continuous Drain VGS=-10V(P-CH) Current (Note 1) TA=70°C, VGS=10V(N-CH), VGS=-10V(P-CH) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) BVDSS VGS Limits N-channel P-channel 30 -30 ±20 ±20 Unit V V ID 6 -4.5 A ID 4.8 -3.6 A IDM Pd 20 -20 A W W / °C °C °C/W 1.25 0.01 -55~+150 100 Tj, Tstg Rth,ja Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit 30 1 - 1.6 18 26 2 2.5 ±100 1 10 25 35 - V V nA μA μA 800 70 71 6 10 24 5 16 3 5 - 0.75 29 10 1.2 - *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=70°C VGS=10V, ID=4.5A VGS=4.5V, ID=3.5A VDS=15V, ID=4.5A pF VDS=20V, VGS=0, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=6Ω, RD=15Ω nC VDS=15V, ID=5A, VGS=10V V ns nC VGS=0V, IS=1A mΩ IS=5A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC8958G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 3/13 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit -30 -1.0 - -1.4 41 60 3 -2.5 ±100 -1 -10 55 75 - V V nA μA μA 838 64 65 8 12 30 23 15 3 7 - -0.8 32 13.5 -1.2 - *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0, Tj=70°C VGS=-10V, ID=-3.5A VGS=-4.5V, ID=-3A VDS=-15V, ID=-3.5A pF VDS=-20V, VGS=0, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω, RD=15Ω mΩ nC VDS=-15V, ID=-4.5A, VGS=-10V V ns nC VGS=0V, IS=-1A IS=-4.5A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC8958G6 CYStek Product Specification Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 4/13 CYStech Electronics Corp. N-channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 20 18 VGS=3.5V 16 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V 14 12 VGS=3V 10 8 6 4 VGS=2.5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 2 0.4 0 0 1 2 3 4 5 6 7 8 9 -75 10 0 25 50 75 100 125 150 175 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=2.5V VGS=3V VGS=4V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) -25 Tj, Junction Temperature(°C) 1000 VGS=4.5V 100 VGS=10V 0.01 0.1 1 10 ID, Drain Current(A) VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0 100 200 4 6 8 IDR , Reverse Drain Current(A) 10 1.8 R DS(on), Normalized Static DrainSource On-State Resistance 180 160 140 120 100 80 ID=5A ID=4A 60 40 20 1.6 VGS=10V, ID=5A 1.4 1.2 1 VGS=4.5V, ID=4A 0.8 0.6 0.4 0 0 MTC8958G6 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on), Static Drain-Source OnState Resistance(mΩ) -50 VDS, Drain-Source Voltage(V) 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 5/13 CYStech Electronics Corp. N-channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), NormalizedThreshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 100 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 Forward Transfer Admittance vs Drain Current VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 0.1 VDS=10V Pulsed Ta=25°C 8 VDS=15V ID=5A 6 4 2 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) Maximum Safe Operating Area Maximum Drain Current vs JunctionTemperature 100 7 RDS(ON) Limited ID, Maximum Drain Current(A) ID, Drain Current(A) 60 80 100 120 140 160 10 1 100μs 1ms 1 10ms 100ms 0.1 0.01 0.01 TA=25°C, Tj=150°C, VGS=10V, RθJA=100°C/W Single Pulse DC 6 5 4 3 2 1 TA=25°C, VGS=10V 0 0.1 1 10 VDS, Drain-Source Voltage(V) MTC8958G6 20 40 Gate Charge Characteristics 10 10 0 Tj, Junction Temperature(°C) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 6/13 N-channel Typical Characteristics(Cont.) Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=10 0°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTC8958G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 7/13 P-channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 20 -VGS=4V 16 -ID, Drain Current (A) -BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V, 6V, 5V,4.5V -VGS=3.5V 12 -VGS=3V 8 -VGS=2.5V 4 1.4 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 5 6 7 8 -VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=-3V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-4.5V VGS=-2.5V 100 VGS=-10V VGS=-4V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current (A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 1.6 180 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 140 120 100 ID=-4.5A ID=-3.5A 80 60 40 1.4 VGS=-10V, ID=-4.5A 1.2 1 VGS=-4.5V, ID=-3.5A 0.8 0.6 20 0.4 0 0 MTC8958G6 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 8/13 P-channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) ,Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 ID=-250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 60 80 100 120 140 160 Gate Charge Characteristics 10 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance-(S) 20 40 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 1 0.1 VDS=-10V Pulsed Ta=25°C 8 VDS=-15V ID=-4.5A 6 4 2 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 Maximum Safe Operating Area 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs JunctionTemperature 100 6 100μs RDS(ON) Limited 10 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 0 1ms 10ms 1 100ms TA=25°C, Tj=150°C, VGS=-10V, RθJA=100°C/W Single Pulse 0.1 DC 0.01 5 4 3 2 1 TA=25°C, VGS=-10V 0 0.01 MTC8958G6 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 9/13 CYStech Electronics Corp. P-channel Typical Characteristics(Cont.) Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=100 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) MTC8958G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 10/13 Reel Dimension MTC8958G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 11/13 Carrier Tape Dimension MTC8958G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 12/13 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC8958G6 CYStek Product Specification Spec. No. : C839G6 Issued Date : 2012.04.18 Revised Date : 2014.05.30 Page No. : 13/13 CYStech Electronics Corp. TSOP-6 Dimension Marking: Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1) ● 8958 □□□□ Device Name Date Code 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Inches Min. Max. 0.1063 0.1220 0.1024 0.1181 0.0551 0.0709 0.0748 REF 0.0374 REF 0.0374 REF 0.0118 0.0197 0.0276 0.0394 DIM A B C D d1 d2 E F Millimeters Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.90 REF 0.95 REF 0.95 REF 0.30 0.50 0.70 1.00 DIM G H I J K L M Inches Min. Max. 0 0.0039 0.0098 0.0047 REF 0.0177 REF 0.0236 REF 0° 10° 0.0433 Millimeters Min. Max. 0 0.10 0.25 0.12 REF 0.45 REF 0.60 REF 0° 10° 1.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC8958G6 CYStek Product Specification