CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45S6R Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating and halogen-free package. Equivalent Circuit Outline HBNP45S6R SOT-363 EIAJ:SC-88/SC-70-6 JEDEC: SOT-363 Ordering Information Device HBNP45S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) 60 50 7 150 TR2 (PNP) -60 -50 -6 -150 200(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 150mW per element must not be exceeded. Characteristics (Ta=25°C) • TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 200 80 - Typ. 0.2 180 2 Max. 0.1 0.1 0.4 600 3.5 Unit V V V μA μA V MHz pF Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% • TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 200 60 - Typ. -0.25 140 4 Max. -0.1 -0.1 -0.5 600 5 Unit V V V μA μA V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 3/7 Characteristic curves • TR1 (NPN) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Current Gain--- HFE Saturation Voltage---(mV) HFE@VCE=6V 100 100 10 0.1 1 10 100 1000 0.1 Collector Current --- IC(mA) Saturation Voltage vs Collector Current 1 10 100 Collector Current --- IC(mA) 1000 Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 100 10 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 100 Collector Current --- IC(mA) Capacitance Characteristics 100 Capacitance---(pF) fT=1MHz Cib 10 Cob 1 0.1 HBNP45S6R 1 10 Reverse-biased Voltage---(V) 100 CYStek Product Specification Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 4/7 CYStech Electronics Corp. • TR2 (PNP) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain--- HFE HFE@VCE=6V 100 100 10 10 0.1 1 10 100 0.1 1000 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 1000 Cutoff Frequency---FT(MHZ) VBE(SAT)@IC=10IB 1000 FT@VCE=12V 100 10 100 0.1 1 10 100 Collector Current---IC(mA) 0.1 1000 Capacitance Characteristics 1 10 Collector Current---IC(mA) 100 Power Derating Curves 100 Power Dissipation---PD(mW) 250 fT=1MHz Capacitance---(pF) 1 Collector Current---IC(mA) 10000 Saturation Voltage---(mV) VCE(SAT)@IC=10IB Cib 10 Cob 200 dual 150 single 100 50 0 1 0.1 HBNP45S6R 1 10 Reverse-biased Voltage---(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 5/7 Reel Dimension Carrier Tape Dimension HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature HBNP45S6R Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : 2013.12.26 Page No. : 7/7 SOT-363 Dimension Marking: 46 Device Code 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBNP45S6R CYStek Product Specification