MTN3400N3

Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 1/ 9
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN3400N3
BVDSS
ID
RDSON(TYP)
30V
5.8A
VGS=10V, ID=5.8A 25mΩ
VGS=4.5V, ID=5A 27mΩ
VGS=2.5V, ID=4A 32mΩ
Features
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTN3400N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN3400N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN3400N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C (Note 3)
Continuous Drain Current @ TA=70C (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
30
±12
5.8
4.6
30
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/C
C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note)
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
90
75
Unit
C/W
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s ; 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Ta=25C)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTN3400N3
Min.
Typ.
Max.
Unit
30
0.7
-
0.8
11
25
27
32
1.4
±100
1
5
28
33
52
V
V
S
nA
μA
μA
-
1052
57
54
5
2.4
16
5
-
m
Test Conditions
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VDS=5V, ID=5A
VGS=±12V, VDS=0
VDS=24V, VGS=0
VDS=24V, VGS=0, Tj=55C
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, VGS=10V, RG=3Ω, ID=5.8A
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*VSD
*IS
*trr
*Qrr
-
9.7
2.7
4.1
1.2
12
3.6
-
0.74
16
8.9
1.0
2.5
-
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 3/ 9
nC
VDS=15V, ID=5.8A, VGS=4.5V

f=1MHz
V
A
ns
nC
VGS=0V, IS=1.0A
VD=VG=0V, VS=1.0V
IS=5A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
46
30
44
Drain-Source Breakdown Voltage
BVDSS(V)
ID, Drain Current(A)
3V,4V,5V,6V,7V,8V,9V,10V
20
VGS=2V
10
42
40
38
36
34
ID=250μA,
VGS=0V
32
30
0
0
1
2
3
4
5
6
7
8
9
-75
10
0
25
50
75
100 125
150 175
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=1.8V
VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
-25
Tj, Junction Temperature(°C)
1000
VGS=2V VGS=2.5V
100
VGS=4.5V
VGS=10V
0.1
1
10
ID, Drain Current(A)
0.01
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0
100
4
8
12
16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
60
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
VDS, Drain-Source Voltage(V)
180
ID=5.8A
160
140
120
100
80
60
40
20
55
VGS=4.5V, ID=5A
50
45
VGS=2.5V, ID=4A
40
35
30
25
20
VGS=10V, ID=5.8A
15
10
0
0
MTN3400N3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.2
VGS(th), Threshold Voltage-(V)
Capacitance---(pF)
10000
Ciss
1000
Crss
Coss
100
1
ID=1mA
0.8
0.6
ID=250μA
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
10
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
VDS=15V
ID=5.8A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
6
8
10
12
14
16
18
20
7
ID, Maximum Drain Current(A)
ID, Drain Current(A)
4
Maximum Drain Current vs JunctionTemperature
100
10μs
100μs
10
1ms
1
10ms
100ms
TA=25°C, Tj=150°C,VGS=10V
Single Pulse
DC
6
5
4
3
2
1
TA=25°C, VGS=10V
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTN3400N3
2
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
0.01
0.01
60 80 100 120 140 160
Gate Charge Characteristics
100
0.1
20 40
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
0.01
0.001
0
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 6/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
1.6
80
VDS=5V
1.4
PD, Power Dissipation(W)
ID, Drain Current(A)
70
60
50
40
30
20
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
10
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
50
100
150
200
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=270°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTN3400N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTN3400N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3400N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2014.08.11
Page No. : 9/ 9
SOT-23 Dimension
Marking:
TE
3400
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3400N3
CYStek Product Specification