MTB06N03H8

Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 1/10
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB06N03H8
BVDSS
ID@VGS=10V
RDSON(max)@VGS=10V, ID=30A
RDSON(max)@VGS=4.5V, ID=20A
30V
75A
6mΩ
9.5mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
Outline
EDFN5×6
MTB06N03H8
Pin 1
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTB06N03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
Total Power Dissipation
TC=100℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
30
±20
75
47
17 *3
10.8 *3
160 *1
53
140
5 *2
50
30
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
2.5
50 *3
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
30
1.0
75
-
1.5
25
4.2
6.6
3.0
±100
1
25
6
9.5
-
2796
308
268
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON)
*1
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
MTB06N03H8
V
V
S
nA
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=24A
VGS=±20
VDS =24V, VGS =0
μA
VDS =20V, VGS =0, Tj=125°C
A VDS =10V, VGS =10V
mΩ VGS =10V, ID=30A
mΩ VGS =4.5V, ID=20A
pF
VGS=0V, VDS=15V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
54
34
10
20
13
13
41
8
1.4
-
-
32
12
75
150
1.3
-
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 3/10
nC
VDS=15V, VGS=10V, ID=30A
ns
VDS=15V, ID=24A, VGS=10V,
RGS=2.7Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 4/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
10V, 9V,8V,7V,6V,5V
140
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
160
120
100
VGS=4V
80
60
VGS=3V
40
VGS=2V
1.4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
20
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
100
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
1
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1.8
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
90
ID=30A
80
70
60
50
40
30
20
10
1.6
VGS=10V, ID=30A
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 4.2 mΩ
0.4
0
0
MTB06N03H8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 5/10
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=30A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Total Gate Charge---Qg(nC)
50
60
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
90
RDS(ON) Limit
100
100μs
1ms
10
10ms
1
100ms
TA=25°C, Tj(max)=150°C,
VGS=10V, RθJA=125°C/W
Single Pulse
0.1
1s
DC
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
80
70
60
50
40
30
20
10
0
0.01
0.01
MTB06N03H8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 6/10
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
1000
120
900
Peak Transient Power (W)
VDS=10V
ID, Drain Current (A)
100
80
60
40
TJ(MAX) =150°C
TA=25°C
θJA=125°C/W
800
700
600
500
400
300
200
20
100
0
0
2
4
6
8
10
VGS , Gate-Source Voltage(V)
12
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
0.1
0.01
0.1
0.05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125 °C/W
0.02
0.01
0.001
Single Pulse
0.0001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 7/10
Reel Dimension
Carrier Tape Dimension
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 8/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Pin #1
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 9/10
DFN5×6 Dimension (C Forming)
Marking :
B06
N03
Device
Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Min.
Max.
0.900
1.000
0.254 REF
4.944
5.096
5.974
6.126
3.910
4.110
3.375
3.575
4.824
4.976
5.674
5.826
DIM
A
A3
D
E
D1
E1
D2
E2
Inches
Min.
Max.
0.035
0.039
0.010 REF
0.195
0.201
0.235
0.241
0.154
0.162
0.133
0.141
0.190
0.196
0.223
0.229
DIM
k
b
e
L
L1
H
θ
Millimeters
Min.
Max.
1.190
1.390
0.350
0.450
1.270 TYP.
0.559
0.711
0.424
0.576
0.574
0.726
10°
12°
Inches
Min.
Max.
0.047
0.055
0.014
0.018
0.050 TYP.
0.022
0.028
0.017
0.023
0.023
0.029
10°
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
MTB06N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date : 2014.11.10
Page No. : 10/10
DFN5×6 Dimension (G Forming)
Marking:
Device Name
B06
N03
Date Code
8-Lead
power
pakPlastic
PlasticPackage
Package
8-Lead
DFN5×6
Package
Code:
CYStek
CYS Package
Code
: H8H8
Millimeters
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 REF
4.90
5.10
1.40 REF
DIM
A
A1
b
c
D
F
Inches
Min.
Max.
0.031
0.039
0.000
0.002
0.014
0.019
0.010 REF
0.193
0.201
0.055 REF
DIM
E
e
H
L1
G
K
Millimeters
Min.
Max.
5.70
5.90
1.27 BSC
5.95
6.20
0.10
0.18
0.60 REF
4.00 REF
Inches
Min.
Max.
0.224
0.232
0.050 BSC
0.234
0.244
0.004
0.007
0.024 REF
0.157 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB06N03H8
CYStek Product Specification