BTC2411N3G

CYStech Electronics Corp.
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 1/6
General Purpose NPN Epitaxial Planar Transistor
BTC2411N3G
Description
• The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching
application.
• High IC(Max), IC(Max) = 0.6A.
• Low VCE(sat) , Typ. VCE(sat) = 0.4V at IC/IB = 500mA/50mA.
Optimal for low Voltage operation.
• Complementary to BTA1036N3G.
• Pb-free and Halogen-free package
Symbol
Outline
BTC2411N3G
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
75
40
6
0.6
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C
Note : Free air condition
BTC2411N3G
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat) 2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
40
6
0.75
85
90
95
100
40
300
-
Typ.
6
Max.
10
10
10
0.5
0.4
0.75
0.95
1.2
300
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=60V
VCE=60V, VBE=-3V
VEB=3V
IC=380mA, IB=10mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=5V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTC2411N3G
BTC2411N3G
Package
SOT-23
(Pb-free & Halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel
2X
CYStek Product Specification
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
10
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
1000
1
Collector Current ---IC(mA)
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
[email protected]=5V
VBE(SAT)@IC=10IB
100
0.1
0.1
1
10
100
1000
Collector Current--- IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
BTC2411N3G
50
100
150
Ambient Temperature --- Ta( ℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTC2411N3G
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2411N3G
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3G
Issued Date : 2008.12.26
Revised Date :
Page No. : 6/6
SOT-23 Dimension
Marking:
A
L
2X
TE
3
B
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style: Pin 1.Base 2.Emitter 3.Collector
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2411N3G
CYStek Product Specification