BTN2222A3

Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 1/8
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN2222A3
Description
• Low collector output capacitance.
• High current capability
• Low leakage current
• High cutoff frequency
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTN2222A3
TO-92
B:Base
C:Collector
E:Emitter
EE CB BC
Ordering Information
Device
BTN2222A3-X-TB-G
BTN2222A3-X-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTN2222A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @Ta=25℃
Derate above 25℃
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
75
V
50
6
600
V
V
mA
Pd
625
mW
Tj ; Tstg
150
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
hFE1
hFE2
hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
Min.
75
50
6
35
50
75
100
50
40
-
Typ.
0.2
230
8.3
Max.
10
10
100
0.3
0.5
1.0
1.2
300
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10 μA
IC=10 mA
IE=10 μA
VCB=60V
VCE=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=500mA
VCE=5V, IC=20mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE4
Rank
A
N
B
Range
100~180
120~270
180~300
BTN2222A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
0.15
500uA
400uA
300uA
0.1
0.05
5mA
0.6
1mA
0.2
Collector Current---IC(A)
Collector Current---IC(A)
0.25
200uA
IB=100uA
0
0.5
0.4
2.5mA
2mA
0.3
1.5mA
0.2
1mA
0.1
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
Ta=125°C
Current Gain---HFE
Current Gain---HFE
Ta=125°C
100
Ta=75°C
Ta=25°C
100
Ta=25°C
Ta=75°C
VCE=2V
VCE=1V
10
10
1
10
100
Collector Current---IC(mA)
1
1000
Current Gain vs Collector Current
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
VCESAT=10IB
Saturation Voltage---(mV)
Current Gain---HFE
6
100
Ta=25°C
Ta=75°C
100
125°C
75°C
25°C
VCE=10V
10
10
1
BTN2222A3
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT=38IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT=20IB
100
125°C
75°C
25°C
10
100
125°C
75°C
25°C
10
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
[email protected]=10V
Ta=75°C
On Voltage---(mV)
Saturation Voltage---(mV)
[email protected]=10IB
Ta=25°C
1000
75°C
25°C
1000
125°C
125°C
100
100
1
10
100
Collector Current---IC(mA)
1
1000
Capacitance vs Reverse-biased Voltage
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
100
Cib
Capacitance---(pF)
1000
10
Cob
VCE=5V
100
10
1
0.1
BTN2222A3
1
10
Reverse-biased Voltage---VR(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 5/8
Typical Characteristics(Cont.)
Safe Operating Area
Power Derating Curve
10
600
Forward Current---IC(A)
Power Dissipation---PD(mW)
700
500
400
300
200
1ms
1
100ms
1s
0.1
DC
100
0
0.01
0
BTN2222A3
50
100
150
Ambient Temperature---TA(℃)
200
1
10
Forward Voltage---VCE(V)
100
CYStek Product Specification
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 6/8
CYStech Electronics Corp.
TO-92 Taping Outline
H2
H2A H2A
H2
D2
A
L
H3
H4 H
L1
H1
D1
F1F2
T2
T
T1
DIM
A
D
D1
D2
F1,F2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
-
BTN2222A3
P1
P
Item
Component body height
Tape Feed Diameter
Lead Diameter
Component Body Diameter
Component Lead Pitch
F1-F2
Height Of Seating Plane
Feed Hole Location
Front To Rear Deflection
Deflection Left Or Right
Component Height
Feed Hole To Bottom Of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Center Of Seating Plane Location
4 Feed Hole Pitch
Over All Tape Thickness
Total Taped Package Thickness
Carrier Tape Thickness
Tape Width
Adhesive Tape Width
20 pcs Pitch
W1
W
D
P2
Millimeters
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
253
Max.
4.83
4.20
0.53
4.83
2.90
±0.3
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN2222A3
CYStek Product Specification
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2014.04.25
Page No. : 8/8
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
2222 □
α3
C
Date Code
HFE rank
□□
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN2222A3
CYStek Product Specification