Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 1/8 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Description • Low collector output capacitance. • High current capability • Low leakage current • High cutoff frequency • Pb-free lead plating and halogen-free package Symbol Outline BTN2222A3 TO-92 B：Base C：Collector E：Emitter EE CB BC Ordering Information Device BTN2222A3-X-TB-G BTN2222A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTN2222A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range VCBO VCEO VEBO IC 75 V 50 6 600 V V mA Pd 625 mW Tj ; Tstg 150 °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 *hFE6 fT Cob Min. 75 50 6 35 50 75 100 50 40 - Typ. 0.2 230 8.3 Max. 10 10 100 0.3 0.5 1.0 1.2 300 - Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=10 μA IC=10 mA IE=10 μA VCB=60V VCE=60V, VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE4 Rank A N B Range 100~180 120~270 180~300 BTN2222A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.7 0.15 500uA 400uA 300uA 0.1 0.05 5mA 0.6 1mA 0.2 Collector Current---IC(A) Collector Current---IC(A) 0.25 200uA IB=100uA 0 0.5 0.4 2.5mA 2mA 0.3 1.5mA 0.2 1mA 0.1 IB=500uA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 Ta=125°C Current Gain---HFE Current Gain---HFE Ta=125°C 100 Ta=75°C Ta=25°C 100 Ta=25°C Ta=75°C VCE=2V VCE=1V 10 10 1 10 100 Collector Current---IC(mA) 1 1000 Current Gain vs Collector Current 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 1000 1000 Ta=125°C VCESAT=10IB Saturation Voltage---(mV) Current Gain---HFE 6 100 Ta=25°C Ta=75°C 100 125°C 75°C 25°C VCE=10V 10 10 1 BTN2222A3 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 4/8 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT=38IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=20IB 100 125°C 75°C 25°C 10 100 125°C 75°C 25°C 10 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBEON@VCE=10V Ta=75°C On Voltage---(mV) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=25°C 1000 75°C 25°C 1000 125°C 125°C 100 100 1 10 100 Collector Current---IC(mA) 1 1000 Capacitance vs Reverse-biased Voltage 10 100 Collector Current---IC(mA) 1000 Transition Frequency vs Collector Current 1000 Transition Frequency---fT(MHz) 100 Cib Capacitance---(pF) 1000 10 Cob VCE=5V 100 10 1 0.1 BTN2222A3 1 10 Reverse-biased Voltage---VR(V) 100 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 5/8 Typical Characteristics(Cont.) Safe Operating Area Power Derating Curve 10 600 Forward Current---IC(A) Power Dissipation---PD(mW) 700 500 400 300 200 1ms 1 100ms 1s 0.1 DC 100 0 0.01 0 BTN2222A3 50 100 150 Ambient Temperature---TA(℃) 200 1 10 Forward Voltage---VCE(V) 100 CYStek Product Specification Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 6/8 CYStech Electronics Corp. TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTN2222A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN2222A3 CYStek Product Specification Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 8/8 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 2222 □ α3 C Date Code HFE rank □□ D H I G α1 Style: Pin 1.Emitter 2.Base 3.Collector E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN2222A3 CYStek Product Specification