BTC2383K3

Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 1/8
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BVCEO
IC
RCESAT(MAX)
BTC2383K3
160V
1A
1Ω
Features
• High breakdown voltage , BVCEO=160V
• Low Saturation Voltage, VCE(sat)=0.2V(typ)@IC=500mA, IB=50mA
• Complementary to BTA1013K3
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-92L
BTC2383K3
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTC2383K3-0-TB-G
BTC2383K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Limits
200
160
6
1
3
0.5
Unit
PD
RθJA
900
139
mW
°C/W
Tj ; Tstg
-55~+150
°C
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
V
A
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
hFE
fT
Cob
*
*
*
*
*
Min.
200
160
6
0.45
160
100
-
Typ.
270
210
7.4
15
2
200
0.4
0.9
0.62
180
6.2
Max.
100
100
500
1
1.2
0.75
320
20
Unit
V
V
V
nA
nA
mV
Ω
V
V
MHz
pF
Test Conditions
IC=100μA
IC=10mA
IE=100μA
VCB=200V
VEB=6V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.35
0.18
1mA
5mA
0.3
0.14
0.12
IC, Collector Current(A)
IC, Collector Current(A)
0.16
500uA
0.1
400uA
0.08
300uA
0.06
200uA
0.04
IB=100uA
0.02
0.25
2.5mA
0.2
1.5mA
0.15
IB=500uA
0.1
0.05
0
0
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
0
6
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
0.6
Emitter Grounded Output Characteristics
0.9
20mA
IC, Collector Current(A)
IC, Collector Current(A)
50mA
0.8
0.5
10mA
8mA
6mA
4mA
0.4
0.3
IB=2mA
0.2
0.1
0.7
25mA
0.6
0.5
0.4
10mA
0.3
IB=5mA
0.2
0.1
0
0
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
6
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE=1V
100
VCE=5V
Current Gain---HFE
Current Gain---HFE
6
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
10
1
BTC2383K3
10
100
IC, Collector Current(mA)
1000
1
10
100
IC, Collector Current(mA)
1000
CYStek Product Specification
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
VCE=10V
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
10
1
10
100
IC, Collector Current(mA)
1000
1
10
10000
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VBEON@VCE=5V
On Voltage---(mV)
VBESAT@IC=50IB
Saturation Voltage---(mV)
1000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
100
100
1
10
100
IC, Collector Current(mA)
1
1000
10
100
IC, Collector Current(mA)
1000
Power Derating Curve
Capacitance vs Reverse-biased Voltage
1.2
Power Dissipation---PD(W)
100
Capacitance---(pF)
100
IC, Collector Current(mA)
Cib
10
Cob
0.9
0.6
0.3
0
1
0.1
BTC2383K3
1
10
VR, Reverse-biased Voltage(V)
100
0
25
50
75
100
125
150
175
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Cutoff Frequency vs Collector Current
Cutoff Frequency---fT(MHz)
1000
VCE=10V
100
10
1
BTC2383K3
10
100
IC, Collector Current(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 6/8
TO-92L Taping Outline
DIM
A1
A
T
d
d1
P
P0
P2
F1, F2
△h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△P
BTC2383K3
Item
Millimeters
Component body width
Component body height
Component body thickness
Lead wire diameter
Lead wire diameter 1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Component alignment, F-R
Tape width
Hole down tape width
Hole position
Hole down tape position
Height of component from tape center
Lead wire clinch height
Lead wire (tape portion)
Feed hole diameter
Taped lead thickness
Carrier tape thickness
Position of hole
Min.
4.70
7.80
3.70
0.35
0.60
12.40
12.50
6.05
2.20
-1.00
17.50
5.50
8.50
19.00
15.50
2.50
3.80
0.35
0.15
3.55
Max.
5.10
8.20
4.10
0.55
0.80
13.00
12.90
6.65
2.80
1.00
19.00
6.50
9.50
1.00
21.00
16.50
4.20
0.45
0.25
4.15
Component alignment
-1.00
1.00
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 8/8
TO-92L Dimension
Marking:
Product Name
C2383
Date Code: Year+Month
□□
Year: 7→2007, 8→2008
Month: 1→1, 2→2, ‧‧‧,
9→9, A→10, B→11, C→12
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92L Plastic Package
CYStek Package Code: K3
Inches
DIM
Min.
0.146
0.050
0.014
0.024
0.014
0.185
0.157
Max.
0.161
0.062
0.022
0.031
0.018
0.201
-
Millimeters
Min.
Max.
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
-
A
A1
b
b1
c
D
D1
Notes: 1.Controlling dimension: millimeters.
DIM
E
e
e1
L
ϕ
h
Inches
Min.
0.307
Max.
0.323
*0.05
0.096
0.543
0.000
0.104
0.559
0.063
0.012
*: Typical
Millimeters
Min.
Max.
7.800
8.200
*1.270
2.440
2.640
13.800
14.200
1.600
0.000
0.300
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2383K3
CYStek Product Specification