MTB06N03E3

Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 1/7
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB06N03E3
BVDSS
30V
ID
VGS=10V, ID=30A
102A
4.3mΩ
VGS=4.5V, ID=24A
6.6mΩ
RDSON(TYP)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
Symbol
Outline
MTB06N03E3
TO-220
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=16A, VDD=25V
Repetitive Avalanche Energy L=0.05mH
TC=25°C
Total Power Dissipation
TC=100°C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature.
MTB06N03E3
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
30
±20
102
72
408 *1
16
256
25
94
47
-55~+175
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
CYStek Product Specification
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.6
62.5
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
30
1
-
1.5
4.3
6.6
28
3
±100
1
25
5.3
8.6
-
53
26
7
12
22
16
65
10
2678
241
204
-
*GFS
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
0.86
30
25
102
408
1.2
-
Unit
V
nA
μA
mΩ
S
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =4.5V, ID=24A
VDS =5V, ID=24A
nC
VDS=15V, ID=30A,VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IF=30A, VGS=0V
IF=30A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
TO-220
50 pcs/tube, 20 tubes/box,
MTB06N03E3-0-UB-S
(Pb-free lead plating and RoHS compliant package)
4 boxes / carton
MTB06N03E3
CYStek Product Specification
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
240
10V,9V,8V,7V,6V,5V
ID, Drain Current(A)
200
160
120
VGS=4V
80
VGS=2V
40
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=3V
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
100
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
1
0.2
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
1.8
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
90
ID=30A
80
70
60
50
40
30
20
10
1.6
VGS=10V, ID=30A
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 4.25mΩ
0.4
0
0
MTB06N03E3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
140
180
50
60
VDS=15V
ID=30A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
120
10μs
RDS(ON) Limit
100μs
1ms
10ms
10
100ms
DC
TC=25°C, Tj=175°C,
VGS=10V,RθJC=1.6°C/W,
single pulse
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
100
10
10
1
60
Gate Charge Characteristics
100
100
20
Tj, Junction Temperature(°C)
100
80
60
40
20
VGS=10V, RθJC=1.6°C/W
0
0.1
0.01
MTB06N03E3
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 5/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
1000
120
900
VDS=10V
Peak Transient Power (W)
ID, Drain Current (A)
100
80
60
40
20
TJ(MAX) =175°C
TC=25°C
θJA=1.6°C/W
800
700
600
500
400
300
200
100
0
0
1
2
3
4
VGS , Gate-Source Voltage(V)
5
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.RθJC (t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.6 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB06N03E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB06N03E3
CYStek Product Specification
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2013.02.26
Page No. : 7/7
CYStech Electronics Corp.
TO-220 Dimension
Marking:
Device
Name
Date
Code
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
B06
N03
□□□□
1
2 3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Millimeters
Min.
Max.
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010 10.310
8.900
8.500
DIM
A
A1
b
b1
c
c1
D
E
Inches
Min.
Max.
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.406
0.394
0.350
0.335
DIM
E1
e
e1
F
h
L
L1
Φ
Millimeters
Min.
Max.
12.060 12.460
2.540*
4.980
5.180
2.890
2.590
0.000
0.300
13.400 13.800
3.560
3.960
3.735
3.935
Inches
Min.
Max.
0.475
0.491
0.100*
0.196
0.204
0.114
0.102
0.000
0.012
0.528
0.543
0.140
0.156
0.147
0.155
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB06N03E3
CYStek Product Specification