BTN3904N3

CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTN3904N3
Description
 The BTN3904N3 is designed for general purpose switching amplifier applications.
 Complementary to BTP3906N3.
 ESD JEDEC rated HBM class 3B(>8KV).
 Pb-free lead plating and halogen-free package
Symbol
Outline
BTN3904N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25C)
Power Dissipation (TC=25C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
60
40
6
200
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
mA
mW
mW
C/W
C/W
C
C
Note : Free air condition
BTN3904N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 2/7
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
0.65
40
70
100
60
30
300
-
Typ.
0.1
0.15
0.75
0.85
-
Max.
50
0.2
0.3
0.85
0.95
300
4
Unit
V
V
V
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10μA
IC=1mA
IE=10μA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=100μA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTN3904N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTN3904N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 3/7
Recommended Soldering Footprint
BTN3904N3
CYStek Product Specification
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
10000
HFE@VCE=1V
Current Gain---HFE
Saturation Voltage-(mV)
VBE(SAT)@IC=10IB
1000
100
10
100
0.1
0.1
1
10
100
Collector Current ---IC(mA)
1000
1
10
1000
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCE(SAT)@IC=10IB
VCE=20V
Cutoff Frequency(MHz)
Saturation Voltage-(mV)
100
Collector Current ---IC(mA)
100
10
1000
100
0.1
1
10
100
1000
Collector Current---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD (mW)
250
200
150
100
50
0
0
50
100
150
Ambient Temperature---TA(℃ )
BTN3904N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTN3904N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN3904N3
CYStek Product Specification
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2015.07.24
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
TE
1A
XX
Date Code
Device Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN3904N3
CYStek Product Specification