Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 1/6 CYStech Electronics Corp. High –speed double diode BAW56N3 Description The BAW56N3 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package. Equivalent Circuit Outline BAW56N3 SOT-23 1 2 Common Anode 3 1：Cathode 2：Cathode 3：Common Anode Cathode Cathode Features • • • • • • Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 100V Repetitive peak reverse voltage: max. 110V Repetitive peak forward current: max. 450mA. Pb-free package Applications • High-speed switching in thick and thin-film circuits. BAW56N3 CYStek Product Specification Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded) Continuous forward current(double diode loaded) Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1μs t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Symbol VRRM VR IF Min - IFRM IFSM Ptot Tj Tstg -65 Max 110 100 215 125 450 Unit V V 4 1 0.5 250 150 +150 A A A mW °C °C mA mA Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Conditions Min Typ. - - - - - IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=100V VR=25V,Tj=150℃ VR=100V,Tj=150℃ Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr Forward recovery voltage Vfr VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA when switched from IF=10mA tr=20ns Max 715 855 1 1.25 30 1 30 50 Unit mV mV V V nA μA μA μA - 2 pF - - 4 ns - - 1.75 V Thermal Characteristics Symbol Parameter Rth,j-tp Rth, j-a thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions Value Note 1 360 500 Unit ℃/W ℃/W Note 1: Device mounted on an FR-4 PCB. BAW56N3 CYStek Product Specification Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Forward Current vs Forward Voltage Forward Current vs Ambient Temperature 225 250 225 single diode loaded 200 Forward Current---IF(mA) Forward Current---IF(mA) 250 275 175 double diode loaded 150 125 100 75 50 200 175 150 125 100 75 50 25 25 0 0 0 50 100 150 0 200 0.2 Ambient Temperature---Ta(℃) Non-repetitive peak forward current vs pulse duration 1.2 1.4 Diode Capacitance vs Reverse Voltage 100 0.7 Diode Capacitance---CD(pF) Non-repetitive peak forward current---IFSM(A) 0.4 0.6 0.8 1 Forward Voltage---VF(V) 10 1 0.1 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 10000 Pulse Duration---tp(μs) 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR(V) Ordering Information Device BAW56N3 BAW56N3 Package SOT-23 (Pb-free package) Shipping Marking 3000 pcs / Tape & Reel A1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BAW56N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BAW56N3 CYStek Product Specification Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: A L B Device Code S 2 1 TE A1 □□ 3 Control Code G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style: Pin 1.Cathode 2.Cathode 3.Common Anode J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAW56N3 CYStek Product Specification