MTE1K0P15KN3

Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 1/ 9
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTE1K0P15KN3
BVDSS
ID
RDSON(TYP)
-150V
-0.69A
VGS=-10V, ID=-0.5A 1.01Ω
VGS=-6V, ID=-0.5A 1.11Ω
Features
•ESD protected 2.5KV
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTE1K0P15KN3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTE1K0P15KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTE1K0P15KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V
TA=25°C
TA=70°C
ID
Pulsed Drain Current
(Note 1&2)
IDM
Maximum Power Dissipation
TA=25°C
TA=70°C
PD
ESD susceptibility
(Note 3)
Operating Junction and Storage Temperature
Tj, Tstg
Limits
-150
±20
-0.69 (Note 4)
-0.50 (Note 4)
-3
1.25
0.8
2500
-55~+150
Unit
V
A
W
V
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient , max (Note 4)
Thermal Resistance, Junction-to-Case , max
Symbol
RθJA
RθJC
Limit
100
50
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
3. Human body model, 1.5kΩ in series with 100pF.
4. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 120°C/W at steady state; 417°C/W when mounted on minimum
copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTE1K0P15KN3
Min.
Typ.
Max.
-150
-2.0
-
-3.2
1.01
1.11
1.2
-4.0
±10
-1
-10
1.2
1.3
-
-
274
20
8
6
11
15
6
-
Unit
Test Conditions
S
VGS=0V, ID=-250µA
VDS=VGS, ID=-250µA
VGS=±20V, VDS=0V
VDS=-120V, VGS=0V
VDS=-120V, VGS=0V, Tj=55°C
VGS=-10V, ID=-0.5A
VGS=-6V, ID=-0.5A
VDS=-15V, ID=-0.5A
pF
VDS=-25V, VGS=0V, f=1MHz
ns
VDS=-75V, ID=-0.5A, VGS=-10V, RG=6Ω
V
µA
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
IS
ISM
*VSD
*trr
*Qrr
-
7
1.3
2.2
-
-0.8
50
90
-0.69
-3
-1.2
-
nC
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 3/ 9
VDS=-75V, ID=-0.5A, VGS=-10V
A
V
ns
nC
VGS=0V, IS=-1A
IS=-0.5A, VGS=0V, dI/dt=100A/µs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Recommended Soldering Footprint
MTE1K0P15KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
3
-ID, Drain Current (A)
2
-VGS=5V
1.5
1
0.5
ID=-250μA,
VGS=0V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V, 6V
2.5
1.2
1
0.8
-VGS=4V
0.6
0
0
2
4
6
-VDS, Drain-Source Voltage(V)
8
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
Tj=25°C
-VGS=6V
2.5
2
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
3
-VGS=4.5V
1.5
1
0.5
-VGS=10V
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
4
2.4
3.5
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-0.5A
3
2.5
2
1.5
1
0.5
2
VGS=-10V, ID=-0.5A
1.6
1.2
0.8
0.4
RDSON @Tj=25°C : 1.01Ω typ
0
0
0
MTE1K0P15KN3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
10
Crss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
0.2
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-15V
Pulsed
TA=25°C
0.01
0.001
VDS=-75V
ID=-0.5A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
Qg, Total Gate Charge(nC)
10
Maximum Drain Current vs JunctionTemperature
10
0.8
RDS(ON)
Limited
1
100μs
1ms
0.1
10ms
100ms
TA=25°C, Tj=150°C,
VGS=-10V, RθJA=100°C/W
Single Pulse
0.01
DC
0.001
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
0.7
0.6
0.5
0.4
0.3
0.2
TA=25°C, VGS=-10V, RθJA=100°C/W
0.1
0
0.01
MTE1K0P15KN3
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
3
-VDS=10V
TJ(MAX) =150°C
TA=25°C
RθJA=100°C/W
40
2
Power (W)
-ID, Drain Current (A)
2.5
1.5
30
20
1
10
0.5
0
0.001
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE1K0P15KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE1K0P15KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE1K0P15KN3
CYStek Product Specification
Spec. No. : C941N3
Issued Date : 2013.11.22
Revised Date :
Page No. : 9/ 9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
TE
KP15
Device Code
XX
Date Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE1K0P15KN3
CYStek Product Specification