MTN2510J3

CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2510J3
BVDSS
100V
ID
VGS=10V, ID=30A
50A
19mΩ
VGS=6V, ID=20A
23mΩ
RDSON(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN2510J3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTN2510J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2510J3
CYStek Product Specification
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
TC=25°C
Power Dissipation
TC=100°C
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
100
±20
50
35
150
30
45
22.5
130
65
-55~+175
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.15
75
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTN2510J3
Min.
Typ.
Max.
Unit
100
2.0
-
3
38
19
23
4.0
±100
1
25
30
35
V
V
S
nA
-
24
6.5
8.1
20
100
100
55
-
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=30A
VGS=±20
VDS =80V, VGS =0V
VDS =70V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =6V, ID=20A
nC
ID=30A, VDS=50V, VGS=10V
ns
VDS=50V, ID=1A, VGS=10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
2003
218
128
2
-
120
380
50
150
1.3
-
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 3/9
pF
VGS=0V, VDS=25V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=25A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTN2510J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
120
ID, Drain Current (A)
100
10V,9V,8V,7V,6V,5V,4V
80
VGS=3V
60
40
VGS=2V
20
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=2V
100
VGS=2.5V
VGS=3V
VGS=4.5V
VGS=10
0.01
0.1
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
ID=20A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=30A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 19mΩ
0
0
0
MTN2510J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 5/9
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=50V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
VDS=25V
8
6
4
2
ID=30A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
RDSON
Limited
ID, Maximum Drain Current(A)
1000
100μs
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
1ms
10ms
100ms
10
1s
DC
1
TC=25°C, Tj=175°C
VGS=10V, θJC=1.15°C/W
Single Pulse
0.1
50
40
30
20
10
VGS=10V, RθJC=1.15°C/W
0
0.01
0.1
MTN2510J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 6/9
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
1000
120
900
VDS=5V
TJ(MAX) =175°C
TC=25°C
θJC=1.15°C/W
800
100
ID, Drain Current(A)
700
Power (W)
80
60
40
600
500
400
300
200
20
100
0
0
0
2
4
6
8
10
VGS , Gate-Source Voltage(V)
12
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.15°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTN2510J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN2510J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2510J3
CYStek Product Specification
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
2510
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2510J3
CYStek Product Specification