MTP2010J3

Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
MTP2010J3
BVDSS
-100V
ID
-20A
95mΩ @ VGS=-10V, ID=-10A
RDSON(MAX)
105mΩ@ VGS=-4.5V, ID=-10A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP2010J3
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Ordering Information
Device
MTP2010J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP2010J3
CYStek Product Specification
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
-100
±20
-20
-14
-80
-12
9.6
4.2
50
25
-55~+175
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
*1
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTP2010J3
Min.
Typ.
Max.
Unit
Test Conditions
-100
-1
-80
-
-2
86
94
15
-3
±100
-1
-25
95
105
-
V
V
nA
μA
μA
A
mΩ
mΩ
S
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20, VDS=0
VDS =-80V, VGS =0
VDS =-70V, VGS =0, TJ=125°C
VDS =-20V, VGS =-10V
VGS =-10V, ID=-10A
VGS =-4.5V, ID=-10A
VDS =-10V, ID=-10A
-
32
6
15
17
5
30
8
-
nC
ID=-7A, VDS=-50V, VGS=-10V
ns
VDS=-20V, ID=-1A, VGS=-10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
2896
91
54.7
-
-
120
520
-20
-80
-1.3
-
pF
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 3/9
VGS=0V, VDS=-25V, f=1MHz
A
V
ns
nC
IF=-10A, VGS=0V
IF=-10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTP2010J3
CYStek Product Specification
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
-ID, Drain Current(A)
60
50
-BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
70
-VGS=5V
40
-VGS=4V
30
20
10
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=3V
0.4
0
0
5
10
15
20
-VDS, Drain-Source Voltage(V)
-100
25
-50
Static Drain-Source On-State resistance vs Drain Current
1.2
-VSD, Source-Drain Voltage(V)
RDS(ON) , Static Drain-Source On-State
Resistance(mΩ)
200
Reverse Drain Current vs Source-Drain Voltage
250
200
150
VGS=-4V
VGS=-10V
100
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
50
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON), Normalized Static DrainSource On-State Resistance
800
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
700
600
500
400
300
200
ID=-10A
100
1.6
VGS=-4.5V, ID=-10A
1.2
VGS=-10V, ID=-10A
0.8
0.4
0
0
MTP2010J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
f=1MHz
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0
-60
40
10
20
30
-VDS, Drain-Source Voltage(V)
-20
100
100
140
10
10
1ms
10ms
100ms
1
DC
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=3°C/W,
single pulse
0.1
VDS=-20V
-VGS, Gate-Source Voltage(V)
10μs
100μs
RDS(ON)
Limited
-ID, Drain Current (A)
60
Gate Charge Characteristics
Maximum Safe Operating Area
8
VDS=-50V
VDS=-80V
6
4
2
ID=-10A
0
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
Maximum Drain Current vs Case Temperature
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Typical Transfer Characteristics
70
25
VDS=-10V
60
20
-ID, Drain Current(A)
-ID, Maximum Drain Current(A)
20
Tj, Junction Temperature(°C)
15
10
5
VGS=-10V
50
40
30
20
10
0
0
25
MTP2010J3
50
75
100 125
150
TC, Case Temperature(°C)
175
200
0
2
4
6
8
10
-VGS , Gate-Source Voltage(V)
12
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 6/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Power Derating Curve
60
PD, Power Dissipation(W)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=-10V
Pulsed
Ta=25°C
0.1
0.01
0.001
50
40
30
20
10
0
0.01
0.1
1
-ID, Drain Current(A)
10
100
0
25
50
75 100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
1
0.2
1.ZθJC(t)=3 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTP2010J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP2010J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2010J3
CYStek Product Specification
Spec. No. : C732J3
Issued Date : 2011.11.10
Revised Date : 2013.12.26
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
2010
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2010J3
CYStek Product Specification