CYStech Electronics Corp. Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BD679A TO-126 C B R1≈8k R2≈120 B：Base C：Collector E：Emitter BD679A E EC B CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Symbol VCBO VCEO VEBO IC(DC) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Power Dissipation Junction Temperature Storage Temperature Limits 80 80 5 4 1 1 40 150 -55~+150 Note : *1. Single Pulse Pw=100ms Unit V V V A A W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(on) 1 *VBE(on) 2 *VFEC *hFE 1 *hFE 2 Min. 80 80 750 750 Typ. - Max. 200 200 2 2.5 2.8 2.5 2.5 3 - Unit V V μA μA mA V V V V V - Test Conditions IC=100μA, IE=0 IC=50mA, IB=0 VCE=50V, IE=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=1.5A, IB=30mA IC=2A, IB=40mA VCE=3V, IC=1.5A VCE=3V, IC=2A IC=5A VCE=3V, IC=1.5A VCE=3V, IC=2A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BD679A BD679A Package TO-126 (Pb-free lead plating package) Shipping Marking 200 pcs / bag, 10 bags/box, 10 boxes/carton BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 100000 Saturation Voltage---(mV) Current Gain--- HFE HFE@VCE=3V 10000 125℃ 1000 75℃ 100 25℃ 10 VCE(SAT)@IC=250IB 25℃ 1000 100 1 10 100 1000 100 10000 Saturation Voltage vs Collcetor Current Saturation Voltage vs Colltctor Current 10000 VCE(SAT)@IC=500IB Saturation Voltage---(mV) Saturation Voltage---(mV) 10000 Collector Current---IC(mA) VCE(SAT)@IC=2000IB 75℃ 25℃ 1000 125℃ 100 1000 25℃ 75℃ 1000 125℃ 100 10000 100 Collector Current---IC(mA) 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collcetor Current Power Derating Curve 10000 1.2 25℃ Power Dissipation---PD(W) VBE(ON)@VCE=3V On Voltage---(mV) 1000 Collector Current---IC(mA) 10000 75℃ 1000 125℃ 100 1 0.8 0.6 0.4 0.2 0 100 1000 Collector Current---IC(mA) BD679A 125℃ 75℃ 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 4/6 Characteristic Curves(Cont.) Power Dissipation---PD(W) Power Derating Curve 45 40 35 30 25 20 15 10 5 0 0 50 100 150 200 Case Temeprature---TC(℃) BD679A CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 Revised Date : 2011.09.30 Page No. : 6/6 CYStech Electronics Corp. TO-126 Dimension Marking: BD679A Date Code □□ Style: Pin 1.Emitter 2.Collector 3.Base *: Typical Millimeters Min. Max. 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 DIM A A1 b b1 c D E Inches Min. Max. 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 DIM e e1 h L L1 P Φ Millimeters Min. Max. *2.290 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Inches Min. Max. *0.090 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BD679A CYStek Product Specification