BD679A

CYStech Electronics Corp.
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 1/6
NPN Epitaxial Planar Transistor
BD679A
Description
The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High BVCEO
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
•Pb-free lead plating package
Equivalent Circuit
Outline
BD679A
TO-126
C
B
R1≈8k
R2≈120
B:Base
C:Collector
E:Emitter
BD679A
E
EC B
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC(DC)
IB
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
Power Dissipation
Junction Temperature
Storage Temperature
Limits
80
80
5
4
1
1
40
150
-55~+150
Note : *1. Single Pulse Pw=100ms
Unit
V
V
V
A
A
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE 1
*hFE 2
Min.
80
80
750
750
Typ.
-
Max.
200
200
2
2.5
2.8
2.5
2.5
3
-
Unit
V
V
μA
μA
mA
V
V
V
V
V
-
Test Conditions
IC=100μA, IE=0
IC=50mA, IB=0
VCE=50V, IE=0
VCB=80V, IE=0
VEB=5V, IC=0
IC=1.5A, IB=30mA
IC=2A, IB=40mA
VCE=3V, IC=1.5A
VCE=3V, IC=2A
IC=5A
VCE=3V, IC=1.5A
VCE=3V, IC=2A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BD679A
BD679A
Package
TO-126
(Pb-free lead plating package)
Shipping
Marking
200 pcs / bag, 10 bags/box, 10 boxes/carton
BD679A
CYStek Product Specification
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
100000
Saturation Voltage---(mV)
Current Gain--- HFE
[email protected]=3V
10000
125℃
1000
75℃
100
25℃
10
VCE(SAT)@IC=250IB
25℃
1000
100
1
10
100
1000
100
10000
Saturation Voltage vs Collcetor Current
Saturation Voltage vs Colltctor Current
10000
VCE(SAT)@IC=500IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
10000
Collector Current---IC(mA)
VCE(SAT)@IC=2000IB
75℃
25℃
1000
125℃
100
1000
25℃
75℃
1000
125℃
100
10000
100
Collector Current---IC(mA)
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collcetor Current
Power Derating Curve
10000
1.2
25℃
Power Dissipation---PD(W)
VBE(ON)@VCE=3V
On Voltage---(mV)
1000
Collector Current---IC(mA)
10000
75℃
1000
125℃
100
1
0.8
0.6
0.4
0.2
0
100
1000
Collector Current---IC(mA)
BD679A
125℃
75℃
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 4/6
Characteristic Curves(Cont.)
Power Dissipation---PD(W)
Power Derating Curve
45
40
35
30
25
20
15
10
5
0
0
50
100
150
200
Case Temeprature---TC(℃)
BD679A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BD679A
CYStek Product Specification
Spec. No. : C652T3-M
Issued Date : 2006.05.24
Revised Date : 2011.09.30
Page No. : 6/6
CYStech Electronics Corp.
TO-126 Dimension
Marking:
BD679A
Date Code
□□
Style: Pin 1.Emitter 2.Collector 3.Base
*: Typical
Millimeters
Min.
Max.
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
DIM
A
A1
b
b1
c
D
E
Inches
Min.
Max.
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
DIM
e
e1
h
L
L1
P
Φ
Millimeters
Min.
Max.
*2.290
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
Inches
Min.
Max.
*0.090
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BD679A
CYStek Product Specification