BAV70N3

Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 1/6
CYStech Electronics Corp.
High –speed double diode
BAV70N3
Description
The BAV70N3 consists of two high-speed switching diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT-23 plastic SMD package.
Equivalent Circuit
Outline
BAV70N3
SOT-23
1
2
Common cathode
3
1：Anode
2：Anode
3：Common cathode
Anode
Anode
Features
 Small plastic SMD package





High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 450mA.
Pb-free lead plating and halogen-free package
Ordering Information
Device
BAV70N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BAV70N3
CYStek Product Specification
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1μs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Symbol
VRRM
VR
IF
Min
-
IFRM
IFSM
Ptot
Tj
Tstg
-65
Max
110
100
215
125
450
Unit
V
V
4
1
0.5
250
150
+150
A
A
A
mW
C
C
mA
mA
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
trr
Forward recovery voltage
Vfr
Conditions
Min
Typ.
-
-
-
-
-
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=100V
VR=25V,Tj=150℃
VR=100V,Tj=150℃
VR=0V, f=1MHz
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Max
715
855
1
1.25
30
2.5
60
100
Unit
mV
mV
V
V
nA
μA
μA
μA
-
1.5
pF
-
-
4
ns
-
-
1.75
V
Thermal Characteristics
Symbol
Parameter
Rth,j-tp
Rth, j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Conditions
Value
Note 1
360
500
Unit
℃/W
℃/W
Note 1: Device mounted on an FR-4 PCB.
BAV70N3
CYStek Product Specification
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Forward Current vs Forward Voltage
Forward Current vs Ambient Temperature
225
250
225
Forward Current---IF(mA)
200
Forward Current---IF(mA)
250
275
single diode loaded
175
double diode loaded
150
125
100
75
50
25
200
175
150
125
100
75
50
25
0
0
0
50
100
150
0
200
0.2
0.4 0.6 0.8
1
Forward Voltage---VF(V)
Ambient Temperature---Ta(℃)
Non-repetitive peak forward
current vs pulse duration
1.4
Diode Capacitance vs Reverse Voltage
100
0.7
Diode Capacitance---CD(pF)
Non-repetitive peak forward
current---IFSM(A)
1.2
10
1
0.1
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
10000
Pulse Duration---tp(μs)
0
2
4
6
8
10
12
14
16
Reverse Voltage---VR(V)
Recommended Soldering Footprint
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAV70N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C303N3S
Issued Date : 2003.04.12
Revised Date : 2014.07.08
Page No. : 6/6
SOT-23 Dimension
A
Marking:
L
Date Code
B
TE
A4
Device Code
S
●
XX
3
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style: Pin 1.Anode 2.Anode
3.Common cathode
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAV70N3
CYStek Product Specification