Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT 80V 8A 0.6V (max.) Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline BTN3501J3 TO-252(DPAK) B：Base C：Collector E：Emitter B C E Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTN3501J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 - Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 1.5 - Unit V μA μA V V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=8A, IB=0.4A IC=5A, IB=50mA IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of VCE(sat) 2 Rank Range BTN3501J3 KB <0.62V KC 0.58V~0.82V N 0.78V~1.5V CYStek Product Specification Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 5000 2000 8mA 1500 6mA 1000 4mA 500 2mA 25mA 4500 10mA Collector Current---IC(mA) Collector Current---IC(mA) 2500 4000 20mA 3500 15mA 3000 2500 10mA 2000 1500 5mA 1000 IB=0mA 500 IB=0mA 0 0 0 2 4 Collector To Emitter Voltage---VCE(V) 6 0 Grounded Emitter Output Characteristics 3 4 5 6 700 500uA 120 2.5mA Collector Current---IC(mA) Collector Current---IC(mA) 2 Grounded Emitter Output Characteristics 140 400uA 100 80 300uA 60 200uA 40 100uA 20 0 1 2 3 4 5 600 2mA 500 400 1.5mA 300 1mA 200 500uA 100 IB=0uA IB=0uA 0 0 0 6 Collector To Emitter Voltage---VCE(V) 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE(SAT) Saturation Voltage---(mV) VCE = 5V Current Gain---H FE 1 Collector To Emitter Voltage---VCE(V) VCE = 2V 100 VCE = 1V 1000 IC = 20IB IC = 50IB 100 IC = 10IB 10 10 1 10 100 1000 Collector Current---I C (mA) BTN3501J3 10000 1 10 100 1000 10000 Collector Current---I C (mA) CYStek Product Specification Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Power Derating Curve 2 VCE(SAT) @ IC = 10IB Power Dissipation---PD(W) Saturation Voltage---(mV) 10000 1000 1.75 1.5 1.25 1 0.75 0.5 0.25 100 0 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---I C (mA) Power Derating Curve Power Dissipation---P D(W) 25 20 15 10 5 0 0 50 100 150 Case Temperature---TC (℃) 200 Recommended soldering footprint BTN3501J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTN3501J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTN3501J3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 7/7 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name N3501 Date Code □□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501J3 CYStek Product Specification