MTP2301S3

Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 1/8
CYStech Electronics Corp.
20V P-Channel Enhancement Mode MOSFET
MTP2301S3
BVDSS
-20V
ID
RDSON(MAX)@VGS=-4.5V, ID=-1.6A
-1.6A
75mΩ(typ.)
RDSON(MAX)@VGS=-2.5V, ID=-1A
113mΩ(typ.)
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-323 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP2301S3
SOT-323
D
G
S
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTP2301S3-0-T1-G
MTP2301S3
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V
Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current
Ta=25℃
Maximum Power Dissipation
Symbol
VDS
VGS
Limits
-20
±8
-1.6
-1.3
-10
340 (Note)
ID
IDM
PD
Ta=70℃
Operating Junction and Storage Temperature Range
218 (Note)
-55~+150
Tj ; Tstg
Unit
V
V
A
mW
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol
Rth,ja
Limit
367 (Note)
Note : Device mounted on minimum copper pad.
Unit
°C/W
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-20
-0.45
-
75
113
4.5
±100
-1
110
150
-
V
V
nA
µA
446
57
52
9.2
7.3
38
12
4.4
0.5
1.5
20
60
50
20
-
-0.86
30
25
-1.6
-1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
IS
VSD
trr*
Qrr*
-
Test Conditions
S
VGS=0, ID=-250µA
VDS=VGS, ID=-250µA
VGS=±8V, VDS=0
VDS=-16V, VGS=0
ID=-1.6A, VGS=-4.5V
ID=-1A, VGS=-2.5V
VDS=-5V, ID=-1.6A
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDD=-10V, ID=-1A, VGS=-4.5V, RG=6Ω
nC
VDS=-10V, ID=-1.6A, VGS=-2.5V
A
V
ns
nC
VGS=0V, IS=-1.6A
mΩ
IF=-3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
MTP2301S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-VGS=5V, 4V, 3V
8
-ID, Drain Current (A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10
6
4
-VGS=2V
2
1.2
1
0.8
0.6
-VGS=1V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
ID=-250μA,
VGS=0V
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VGS=1.5V
-VGS=2V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
100
-VGS=2.5V
-VGS=4.5V
Tj=25°C
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
1.6
360
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-1.6A
320
280
240
200
160
120
80
VGS=-4.5V, ID=-1.6A
1.4
1.2
1
0.8
0.6
0.4
40
0
MTP2301S3
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 4/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) ,Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
Gate Charge Characteristics
5
10
9
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
7
Power (W)
20 40
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note 1 on page 2)
8
0
6
5
4
3
2
VDS=-10V
ID=-1.6A
4
3
2
1
1
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
2
3
4
Qg, Total Gate Charge(nC)
5
6
Maximum Drain Current vs JunctionTemperature
100
2
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
1
10
100μs
1
1ms
10ms
0.1
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=367°C/W
Single Pulse
100ms
DC
0.01
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
TA=25°C, VGS=-4.5V, RθJA=367°C/W
0.2
0
0.01
MTP2301S3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
10
PD, Power Dissipation(W)
-VDS=5V
-ID, Drain Current (A)
8
6
4
2
Mounted on FR-4 board
with minimum pad area
0.3
0.2
0.1
0
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=367 °C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP2301S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP2301S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2301S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 8/8
SOT-323 Dimension
Marking:
TE
2301
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2301S3
CYStek Product Specification