MTE50N15Q8

Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 1/9
CYStech Electronics Corp.
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTE50N15Q8
BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=8V, ID=5A
150V
7.7A
39 mΩ(typ)
40 mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
Symbol
Outline
MTE50N15Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTE50N15Q8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE50N15Q8
CYStek Product Specification
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=70°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
TC=25 °C
Continuous Source Drain Diode Current
TA=25 °C
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
TC=25 °C
TC=70 °C
Total Power Dissipation
TA=25 °C
TA=70 °C
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
IAS
IS
IAS
EAS
PD
Tj, Tstg
Limits
Unit
150
±30
7.7
6.1
5.5 *1
4.4 *1
50
*2
20
4.5
2.6 *1
20
20
5.9
3.8
3.1 *1
2.0 *1
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
Symbol
Rth,j-c
Rth,j-a
Value
21
40
Unit
*2
°C/W
Note : *1. When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 80 °C/W at steady state; 125°C/W when mounted on minimum
pad.
*2. Pulse width limited by maximum junction temperature.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/Tj
ΔVGS(th)/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
MTE50N15Q8
Min.
Typ.
Max.
Unit
150
2.0
-
133
-9.6
3.5
11
39
40
4.5
±100
1
10
46
48
V
mV/°C
V
S
nA
μA
μA
mΩ
mΩ
Test Conditions
VGS=0V, ID=250μA
ID=250μA
ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
VGS=±30V
VDS =150V, VGS =0V
VDS =150V, VGS =0V, Tj=55°C
VGS =10V, ID=5A
VGS =8V, ID=5A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Dynamic
Qg(VGS=10V) *1, 2
30
45
Qg(VGS=8V) *1, 2
24.7
37
Qgs *1, 2
7.8
Qgd *1, 2
8.9
Ciss
1696
Coss
120
Crss
60
td(ON) *1, 2
12
18
tr
8
12
*1, 2
td(OFF) *1, 2
30
45
tf *1, 2
12
18
td(ON) *1, 2
12
18
tr
12
18
*1, 2
td(OFF) *1, 2
22
33
tf *1, 2
12
18
Source-Drain Diode Ratings and Characteristics
IS *1
7.7
ISM *3
50
VSD *1
0.72
1.2
trr
80
Qrr
120
ta
56
tb
24
-
Unit
Test Conditions
nC
VDS=75V,ID=5A, VGS=10V
pF
VDS=50V, VGS=0V, f=1MHz
ns
VDS=50V, ID=5A, VGS=10V, RG=1Ω
ns
VDS=50V, ID=5A, VGS=8V, RG=1Ω
A
V
ns
nC
TC=25°C
IS=2.6A, VGS=0V
IF=5A, dIF/dt=100A/μs
ns
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTE50N15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
30
10V, 9V, 8V, 7V, 6V
ID, Drain Current(A)
25
20
15
10
VGS=5V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
5
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=7V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
10
0.2
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
3
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
90
ID=5A
80
70
60
50
40
30
20
10
2.5
VGS=10V, ID=5A
2
1.5
1
0.5
RDS(ON) @Tj=25°C : 39 mΩ typ
0
0
0
MTE50N15Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
f=1MHz
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
ID=5A
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
50
75 100 125 150 175
10
0.01
0.001
VDS=75V
VDS=50V
6
VDS=100V
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
7
RDS(ON) Limit
100μs
1ms
1
10ms
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.1
100ms
1s
DC
MTE50N15Q8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
6
5
4
3
2
1
TA=25°C, VGS=10V, RθJA=40°C/W
0
0.01
0.01
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
25
Gate Charge Characteristics
100
10
0
Tj, Junction Temperature(°C)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
30
500
VDS=10V
400
20
Power (W)
ID, Drain Current (A)
25
15
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
300
200
10
100
5
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE50N15Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE50N15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE50N15Q8
CYStek Product Specification
Spec. No. : C931Q8
Issued Date : 2014.03.24
Revised Date : 2014.06.24
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
E50
N15
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE50N15Q8
CYStek Product Specification