BTD1768N3

CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTD1768N3
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23
BTD1768N3
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTD1768N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj ; Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Limits
100
80
5
1
2 (Note)
225
556
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
120
-
Typ.
0.15
100
20
Max.
1
1
0.4
560
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
[email protected]=2V
[email protected]=20IB
100
[email protected]=20IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
On Voltage vs Collector Current
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
On Voltage---(mV)
1000
VBE(on)@VCE=2V
100
10
100
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
Capacitance Characteristics
250
100
Power Dissipation---PD(mW)
Capacitance---Cob(pF)
f=1MHz
10
200
150
100
50
0
1
0.1
BTD1768N3
1
10
Collector Base Voltage-- VCB(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 4/7
Reel Dimension
Carrier Tape Dimension
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 5/7
Recommended Soldering Footprint
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD1768N3
CYStek Product Specification
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :2014.07.01
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
AJ
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated..
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768N3
CYStek Product Specification