MTB14A03V8

Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 1/9
CYStech Electronics Corp.
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB14A03V8
BVDSS
ID
RDSON(TYP)
VGS=10V, ID=6A
VGS=4.5V, ID=4A
30V
8.5A
11.2mΩ
16mΩ
Description
The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3×3
MTB14A03V8
G：Gate
D：Drain S：Source
Pin 1
Ordering Information
Device
MTB14A03V8-0-T1-G
MTB14A03V8
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 2/9
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Single device operation
Total Power Dissipation
Single device value at dual operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
30
±20
8.5
6.8
40 *1
1.5 *2
1.24 *2
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Symbol
Rth,j-a
Value
84 *2
101 *2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB14A03V8
Min.
Typ.
Max.
30
1
-
1.7
9
11.2
16
2.5
±100
1
25
15
23
-
1105
117
100
16
3.3
4
12
9
33
12
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=6A
VGS=±20V
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125°C
VGS =10V, ID=6A
VGS =4.5V, ID=4A
pF
VDS=15V, VGS=0V, f=1MHz
nC
VDS=15V, VGS=10V, ID=8.5A
ns
VDS=15V, ID=1A, VGS=10V, RGS=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
-
0.74
55
6
2.3
9.2
1.2
-
Unit
Test Conditions
A
V
ns
nC
IS=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
35
BVDSS, Normalized Drain-Source
Breakdown Voltage
40
VGS=4V
30
10V,9V,8V,7V,6V,5V
25
20
15
10
VGS=3V
5
VGS=2V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
-75 -50 -25
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
10
VGS=4.5V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(on), Normalized Static DrainSource On-State Resistance
280
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=6A
240
200
160
120
80
40
VGS=10V, ID=6A
1.8
1.6
1.4
1.2
1
0.8
RDSON @ Tj=25°C : 11.2 mΩ typ
0.6
0.4
0
0
MTB14A03V8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=15V
VDS=5V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VGS=10V
0.1
Ta=25°C
Pulsed
8
VDS=10V
6
VDS=5V
4
2
ID=8.5A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
100
10
ID, Maximum Drain Current(A)
RDSON
Limite
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μs
1ms
1
TA=25°C, Tj=150°C
VGS=10V, RθJA=84°C/W
Single Pulse
0.1
10ms
100ms
1s
DC
9
8
7
6
5
4
3
2
TA=25°C, VGS=10V, RθJA=84°C/W
1
0
0.01
0.1
MTB14A03V8
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
40
VDS=10V
35
TJ(MAX) =150°C
TA=25°C
θJA=84°C/W
40
30
Power (W)
ID, Drain Current(A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
25
20
15
10
30
20
10
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=84°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 9/9
DFN3×3 Dimension
Marking:
D1 D1 D2 D2
Date
Code
B14
A03
S1 G1 S2 G2
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
Min.
Max.
0.650
0.850
0.152 REF
0.000
0.050
2.900
3.100
0.935
1.135
0.280
0.480
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
D2
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.037
0.045
0.011
0.019
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB14A03V8
CYStek Product Specification