CYStech Electronics Corp.

CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTC2880N3
Features
 High breakdown voltage, BVCEO≥ 100V
 Large continuous collector current capability
 Low collector saturation voltage
 Pb-free lead plating and halogen-free package
Symbol
Outline
BTC2880N3
SOT-23
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTC2880N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC2880N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
RθJA
Tj ; Tstg
Limits
180
100
7
2
5
0.4
225
556
-55~+150
Unit
V
V
V
A
A
A
mW
C/W
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
100
7
120
150
80
50
-
Typ.
0.11
0.22
0.44
0.85
0.77
18
Max.
100
100
0.2
0.4
1
1.2
0.9
250
40
Unit
V
V
V
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTC2880N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
HFE
Saturation Voltage-(mV)
Current Gain---HFE
VCE=5V
100
VCE=2V
IC=20IB
100
VCE=1V
IC=10IB
10
10
1
10
100
1000
Collector Current ---IC(mA)
10000
1
Saturation Voltage vs Collector Current
10000
VBESAT@IC=10IB
VBEON@VCE=5V
On Voltage-(mV)
Saturation Voltage-(mV)
10000
On Voltage vs Collector Current
10000
1000
1000
100
100
1
10
100
1000
1
10000
Collector Current--- IC(mA)
10
100
1000
Collector Current--- IC(mA)
10000
Output Capatiance vs Reverse Biased Voltage
Power Derating Curve
100
Output Capacitance---Cob(pF)
250
Power Dissipation---PD(mW)
10
100
1000
Collector Current ---IC(mA)
200
150
100
50
10
1
0
0
BTC2880N3
25
50
75 100 125 150
Ambient Temperature---TA(℃)
175
200
0.1
1
10
100
Reverse Biased Voltage--- VCB(V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 4/7
Recommended Soldering Footprint
BTC2880N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTC2880N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2880N3
CYStek Product Specification
Spec. No. : C319N3
Issued Date : 2014.12.05
Revised Date : 2015.03.18
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Device Code
AW
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
 Lead :Pure tin plated.
 Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2880N3
CYStek Product Specification