BTC3097T3

Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 1/6
CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
BTC3097T3
Features
• High voltage, BVCBO=1600V min., BVCEO=800V min.
• Pb-free lead plating package
Symbol
Outline
BTC3097T3
TO-126
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦300μs,Duty≦2%.
BTC3097T3
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj ; Tstg
Limit
1600
800
6
1
3 *1
1
10
-55~+150
Unit
V
V
V
A
A
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Cob
tr
tstg
tf
Min.
1600
800
6
20
24
5
-
Typ.
10
-
Max.
10
10
100
0.2
0.35
1.2
35
0.8
3
0.4
Unit
V
V
V
μA
μA
nA
V
V
V
pF
μs
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=1600V, IE=0
VCB=800V, IB=0
VEB=6V, IC=0
IC=200mA, IB=40mA
IC=500mA, IB=100mA
IC=500mA, IB=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz
VCC=400V, IC=0.5A, IB1=0.1A
IB2=-0.2A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTC3097T3
BTC3097T3
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 10 bags/box, 10 boxes/carton
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 3/6
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.16
0.045
0.14
1mA
Collector Current---IC(A)
Collector Current---IC(A)
0.04
0.035
0.03
0.025
0.02
0.01
500uA
400uA
300uA
0.005
200uA
IB=100uA
0.015
5mA
0.12
0.1
2.5mA
2mA
1.5mA
0.08
0.06
0.04
1mA
0.02
IB=500uA
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.6
20mA
0.3
0.25
0.2
10mA
0.15
8mA
6mA
4mA
0.5
Collector Current---IC(A)
Collector Current---IC(A)
0.35
0.1
IB=2mA
50mA
0.4
0.3
20mA
15mA
0.2
10mA
IB=5mA
0.1
0.05
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
Current Gain vs Collector Current
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Saturation Voltage vs Collector Current
100
10000
VCE=5V
[email protected]=5IB
Saturation Voltage---(mV)
Current Gain---HFE
6
VCE=2V
10
VCE=1V
1
1000
100
10
1
10
100
1000
Collector Current---IC(mA)
BTC3097T3
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 4/6
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Capacitance vs Reverse-biased Voltage
10000
1000
Capacitance---(pF)
Saturation Voltage---(mV)
[email protected]=5IB
1000
Cib
100
10
Cob
100
1
1
10
100
1000
Collector Current---IC(mA)
10000
0.1
Onn Voltage vs Collector Current
100
Power Derating Curve
10000
1.2
Power Dissipation---PD(W)
VBEON @ VCE=5V
On Voltage---(mV)
1
10
Reverse-biased Voltage---VR(V)
1000
1
0.8
0.6
0.4
0.2
0
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
BTC3097T3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC3097T3
CYStek Product Specification
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 6/6
CYStech Electronics Corp.
TO-126 Dimension
Marking:
C3097
Date Code
□□
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
*: Typical
Millimeters
Min.
Max.
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
DIM
A
A1
b
b1
c
D
E
Inches
Min.
Max.
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
DIM
e
e1
h
L
L1
P
Φ
Millimeters
Min.
Max.
*2.290
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
Inches
Min.
Max.
*0.090
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC3097T3
CYStek Product Specification