HQN2498QF

CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 1/6
Quadruple High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
HQN2498QF
Description
• High breakdown voltage. (BVCEO=400V)
• Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
• Complementary to HQP1498QF
• Pb-free package
Equivalent Circuit
Outline
HQN2498QF
SOP-10
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
HQN2498QF
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
400
400
7
300
1.5
150
-55~+150
V
V
V
mA
W
°C
°C
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
R
fT
Cob
Min.
400
400
7
50
50
0.7
-
Typ.
0.13
0.11
0.16
100
13
Max.
100
10
100
0.18
0.18
0.3
3.7
270
1.3
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
kΩ
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=400V
VCE=300V, REB=4kΩ
VEB=6V
IC=20mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=5MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
HQN2498QF
HQN2498QF
Package
SOP-10
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
N2498
Preliminary
CYStek Product Specification
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Current Gian vs Collector Current
Saturation Voltage vs Collector Current
100000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCE = 10V
VCE = 5V
10000
VCE(SAT) @ IC = 20IB
1000
100
VCE(SAT) @ IC =10IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
1.6
10000
Power Dissipation---PD(W)
1.4
Saturation Voltage---(mV)
1000
IC=10IB
IC=20IB
1000
Total power dissipation
per package
1.2
1
Power dissipation per
transistor
0.8
0.6
0.4
0.2
VBE(SAT)
0
100
1
HQN2498QF
10
100
Collector Current---IC(mA)
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
HQN2498QF
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 5/6
Recommended wave solderiRecommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HQN2498QF
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 6/6
SOP-10 Dimension
Marking:
N2498
□□
10-Lead SOP-10 Plastic
Surface Mounted Package
CYStek Package Code: QF
Inches
Min.
Max.
0.2283 0.2441
0.1990 0.1969
0.1496 0.1575
0°
8°
0.0157 0.0354
0.0075 0.0098
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
DIM
M
H
L
J
K
G
Inches
Min.
Max.
0.0039 0.0098
0.0118 0.0173
0.0531 0.0689
0.0148 REF.
45° TYP.
0.0394
Millimeters
Min.
Max.
0.10
0.25
0.30
0.44
1.35
1.75
0.375 REF.
45° TYP.
1.00 TYP.
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HQN2498QF
Preliminary
CYStek Product Specification