DTC114ES3

Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 1/6
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC114ES3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA114ES3
• Pb-free package
Equivalent Circuit
Outline
SOT-323
DTC114ES3
R1=10kΩ , R2=10 kΩ
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
DTC114ES3
Symbol
VCC
VI
IO
IO(max.)
Pd
Tj
Tstg
Limits
50
-10~+40
50
100
200
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 2/6
Electrical Characteristics (Ta=25°C)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
30
7
0.8
-
Typ.
10
1
250
Max.
0.5
0.3
0.88
0.5
13
1.2
-
Unit
V
V
V
mA
μA
kΩ
MHz
Test Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
DTC114ES3
DTC114ES3
Package
SOT-323
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
8A
CYStek Product Specification
Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Output Current
Output Voltage vs Output Current
1000
Output Voltage---V O(on)(mV)
1000
Current Gain---GI
Vo=5V
100
Io / Ii=20
100
10
10
1
10
Output Current ---Io(mA)
1
100
10
100
Output Current ---Io(mA)
Output Current vs Input Voltage (OFF characteristics)
Input Voltage vs Output Current (ON characteristics)
100
10
Output Current --- Io(mA)
Input Voltage --- V I(on)(V)
Vo=0.3V
Vcc=5V
10
1
0.1
1
0.1
1
10
Output Current --- Io(mA)
100
0.1
1
Input Voltage --- VI(off)(V)
10
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
DTC114ES3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC114ES3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC114ES3
CYStek Product Specification
Spec. No. : C351S3
Issued Date : 2002.06.01
Revised Date : 2010.11.10
Page No. : 6/6
CYStech Electronics Corp.
SOT-323 Dimension
Marking:
3
Q
A1
1
C
Device Code
Lp
2
8A
TE
□□
A
detail Z
bp
e1
W
B
e
Date Code
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style: Pin 1.Base 2.Emitter 3.Collector
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC114ES3
CYStek Product Specification