Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 1/13 CYStech Electronics Corp. Dual N-Channel Enhancement Mode MOSFET MTS2072G6 BVDSS ID RDSON(TYP.) Tr1(N-CH) 60V 0.53A(VGS=10V) 1.2Ω(VGS=10V) 1.6Ω(VGS=4.5V) Tr2(N-CH) 30V 5.6A(VGS=10 V) 16.6mΩ(VGS=10V) 24.7mΩ(VGS=4.5V) Description The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTS2072G6 TSOP-6 D1 G：Gate S：Source D：Drain MTS2072G6 Pin 1 G2 S2 G1 S1 D2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C, VGS=10V (Note 1) Continuous Drain Current @TA=70 °C, VGS=10V (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) BVDSS VGS ID ID IDM Pd Tj, Tstg Rth,ja Limits Unit N-channel N-channel 60 30 V ±20 ±20 V 0.53 5.6 A 0.42 4.5 A 1 20 A 1.14 W 0.01 W / °C -55~+150 °C 110 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. Tr 1, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. 60 0.9 100 1.5 1.2 1.6 215 2.4 ±10 1 10 2.5 3 - 31 6 4.1 2.5 6.3 6 4.4 0.9 0.1 0.3 - 0.8 0.53 1 1.2 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD - Unit Test Conditions mS VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 VDS=48V, VGS=0, Tj=70°C ID=500mA, VGS=10V ID=100mA, VGS=4.5V VDS=10V, ID=100mA pF VDS=10V, VGS=0, f=1MHz ns VDS=30V, ID=100mA, VGS=10V, RG=25Ω nC VDS=30V, ID=0.53A, VGS=10V V μA Ω A V VGS=0V, IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 3/13 Tr 2, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 30 1 - 1.6 16.6 24.7 6 2.5 ±100 1 25 25 35 - V V nA μA μA 718 78 69 7.4 19 35 13 10 2.5 3.1 - 0.82 5 20 1.2 *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD - Test Conditions S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=24V, VGS=0 VDS=24V, VGS=0, Tj=70°C ID=5A, VGS=10V ID=3A, VGS=4.5V VDS=5V, ID=4A pF VDS=15V, VGS=0, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=6Ω nC VDS=15V, ID=5.6A, VGS=10V mΩ A V VGS=0V, IS=5A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTS2072G6-0-T1-G MTS2072G6 Package TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 4/13 CYStech Electronics Corp. N-channel Typical Characteristics, Tr 1 Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 1.0 ID, Drain Current(A) 0.9 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 8V, 7V, 6V 0.8 4.5V 0.7 0.6 0.5 3.5V 0.4 0.3 3V 0.2 1.2 1 0.8 0.6 2.5V VGS=2V 0.1 0.0 0 1 2 3 4 VDS , Drain-Source Voltage(V) 5 ID=250μA, VGS=0V 0.4 -75 -50 -25 6 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(Ω) 100 VGS=2.5V 10 VGS=4.5V VGS=10V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 1 0.001 0.01 0.1 ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 IDR , Reverse Drain Current(A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance 7 R DS(ON), Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 6 5 4 3 ID=500mA 2 1 VGS=10V, ID=500mA 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 1.2Ω 0.4 0 0 MTS2072G6 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 5/13 N-channel Typical Characteristics, Tr 1(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 100 Capacitance---(pF) Ciss 10 C oss Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 100 140 Typical Transfer Characteristics 0.7 1 VDS=5V 0.9 0.6 0.8 0.5 ID, Drain Current(A) ID, Maximum Drain Current(A) 60 Tj, Junction Temperature(°C) Maximum Drain Current vs JunctionTemperature 0.4 0.3 0.2 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TA=25°C, VGS=10V, RθJA=110°C/W 0.1 0 0 25 50 75 100 125 150 Tj, Junction Temperature(°C) 0 175 1 2 3 4 VGS , Gate-Source Voltage(V) 5 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 1 9 GFS, Forward Transfer Admittance-(S) 10 VGS, Gate-Source Voltage(V) 20 VDS=30V ID=0.53A 8 7 6 5 4 3 2 1 0 0 MTS2072G6 0.2 0.4 0.6 0.8 Qg, Total Gate Charge(nC) 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 CYStek Product Specification Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 6/13 CYStech Electronics Corp. N-channel Typical Characteristics, Tr 1(Cont.) Maximum Safe Operating Area 100μs 1 1ms ID, Drain Current (A) RDS(ON) Limit 10ms 0.1 100m TA=25°C, Tj=150°C VGS=10V, RθJA=110°C/W Single Pulse DC 0.01 0.01 0.1 1 10 VDS, Drain-Source Voltage(V) 100 Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance 1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 7/13 N-channel Typical Characteristics, Tr 2 Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 20 ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V, 4V 15 10 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V VGS=10V 10 0.01 0.1 1 ID, Drain Current(A) 10 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0 100 2 4 6 8 IDR, Reverse Drain Current (A) 2 R DS(ON) , Normalized Static DrainSource On-State Resistance 180 ID=5A 140 120 100 80 60 40 VGS=10V, ID=5A 1.6 1.2 0.8 RDSON@Tj=25°C : 16.6mΩ 20 0.4 0 0 MTS2072G6 10 Drain-Source On-State Resistance vs Junction Tempearture 200 160 VGS=0V 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 8/13 N-channel Typical Characteristics, Tr 2(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th) ,Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 20 40 60 80 100 120 140 160 Gate Charge Characteristics 10 10 1 0.1 VDS=5V Pulsed Ta=25°C VDS=15V ID=5.6A 8 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance-(S) Forward Transfer Admittance vs Drain Current 6 4 2 0 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 0 10 Typical Transfer Characteristics 2 4 6 8 Qg, Total Gate Charge(nC) 10 12 Maximum Drain Current vs JunctionTemperature 7 20 ID, Maximum Drain Current(A) VDS=5V 16 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 12 8 4 0 6 5 4 3 2 1 TA=25°C, VGS=10V, RθJA=110°C/W 0 0 MTS2072G6 1 2 3 4 VGS, Gate-Source Voltage(V) 5 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 9/13 CYStech Electronics Corp. N-channel Typical Characteristics, Tr 2(Cont.) Maximum Safe Operating Area 100 ID, Drain Current (A) 10 100μs 1 1ms 10ms 0.1 100m TA=25°C, Tj=150°C VGS=10V, RθJA=110°C/W Single Pulse DC 0.01 0.01 0.1 1 10 VDS, Drain-Source Voltage(V) 100 Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180 °C/W 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 10/13 Reel Dimension MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 11/13 Carrier Tape Dimension MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 12/13 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTS2072G6 CYStek Product Specification Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 13/13 CYStech Electronics Corp. TSOP-6 Dimension Marking: Device Name 2072 □□□□ Date Code ● ● Style: Pin 1. Gate1 Pin 2. Source1 Pin 3. Drain2 Pin 4. Source2 Pin 5. Gate2 Pin 6. Drain1 (G1) (S1) (D2) (S2) (G2) (D1) 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.350 0.500 0.080 0.200 2.820 3.020 DIM A A1 A2 b c D Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.014 0.020 0.003 0.008 0.111 0.119 DIM E E1 e e1 L θ Millimeters Min. Max. 1.600 1.700 2.650 2.950 0.95 (BSC) 1.90 (BSC) 0.300 0.600 0° 8° Inches Min. Max. 0.063 0.067 0.104 0.116 0.037 (BSC) 0.075 (BSC) 0.012 0.024 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTS2072G6 CYStek Product Specification