MTB60N06J3

CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB60N06J3
BVDSS
60V
ID
RDSON(MAX)@VGS=10V, ID=10A
16A
35mΩ(typ.)
RDSON(MAX)@VGS=5V, ID=8A
40mΩ(typ.)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTB60N06J3
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Ordering Information
Device
MTB60N06J3-0-T3-G
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB60N06J3
CYStek Product Specification
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
60
±20
16
10
30
16
12.8
3.6
20
8
-55~+150
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
ID(ON)
*1
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
MTB60N06J3
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
12
-
1.7
10
35
40
3.0
±100
1
25
50
55
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20, VDS=0
VDS =48V, VGS =0
VDS =40V, VGS =0, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=10A
VGS =5V, ID=8A
-
11
2.2
4.2
11.7
5.2
18
-
nC
ID=10A, VDS=20V, VGS=10V
ns
VDS=20V, ID=1A, VGS=10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
6
1165
56
43
2.5
-
-
0.87
16
8
12
48
1.3
-
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 3/9
pF
VGS=0V, VDS=20V, f=1MHz
Ω
VGS=15mV, VDS=0, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
100
30
BVDSS, Drain-Source Breakdown
Voltage(V)
10V, 9V, 8V, 7V,6V,5V
ID, Drain Current (A)
25
VGS=4V
20
15
10
VGS=3V
5
90
80
70
60
50
-100
0
0
8
2
4
6
VDS, Drain-Source Voltage(V)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
200
1.2
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
10000
VGS=3V
VGS=2.5V
100
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
100
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
360
320
280
240
200
160
120
ID=10A
ID=8A
80
40
80
VGS=5V, ID=8A
60
40
VGS=10V, ID=10A
20
0
0
0
MTB60N06J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.4
VGS(th), Threshold Voltage(V)
Capacitance---(pF)
10000
Ciss
1000
100
C oss
Crss
ID=250μA
2.2
2
1.8
1.6
1.4
1.2
1
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
Gate Charge Characteristics
100
10
VDS=20V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
Pulsed
Ta=25°C
8
VDS=50V
6
4
2
ID=10A
0
0.1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
16
20
100
18
10μs
RDSON
Limited
ID, Maximum Drain Current(A)
10
4
8
12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current (A)
20
100μs
1ms
10ms
100ms
DC
1
TC=25°C, Tj=150°C
VGS=10V
Single Pulse
0.1
16
14
12
10
8
6
4
VGS=10V
2
0
0.01
0.1
MTB60N06J3
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
VDS=5V
ID, Drain Current(A)
35
30
25
20
15
10
5
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
0.2
1
0.1
1.ZθJC(t)=6.25°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.05
0.02
0.01
0.1
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB60N06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB60N06J3
CYStek Product Specification
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date : 2013.12.26
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B60
N06
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB60N06J3
CYStek Product Specification