BTC2411N3

CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 1/8
General Purpose NPN Epitaxial Planar Transistor
BTC2411N3
Description
• The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching
application.
• High IC(Max), IC(Max) = 0.6A.
• Low VCE(sat) , Typ. VCE(sat) = 0.2V at IC/IB = 500mA/50mA.
Optimal for low Voltage operation.
• Complementary to BTA1036N3.
• Pb-free lead plating and halogen-free package.
• AEC-Q101 qualified.
Symbol
Outline
BTC2411N3
SOT-23
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTC2411N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC2411N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
75
50
6
0.6
225 (Note)
560
556 (Note)
223
-55~+150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C
Note : Free air condition
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat) 2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
50
6
0.7
85
90
95
100
40
-
Typ.
0.2
230
9.3
Max.
10
10
10
0.5
0.25
0.45
1.0
1.2
300
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=60V
VCE=60V, VBE=-3V
VEB=3V
IC=380mA, IB=10mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=5V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 60% RH
BTC2411N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
0.15
500uA
400uA
300uA
0.1
0.05
5mA
0.6
1mA
0.2
Collector Current---IC(A)
Collector Current---IC(A)
0.25
200uA
IB=100uA
0
0.5
0.4
2.5mA
2mA
0.3
1.5mA
0.2
1mA
0.1
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
Ta=125°C
Current Gain---HFE
Current Gain---HFE
Ta=125°C
100
Ta=75°C
Ta=25°C
100
Ta=25°C
Ta=75°C
VCE=2V
VCE=1V
10
10
1
10
100
Collector Current---IC(mA)
1
1000
Current Gain vs Collector Current
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
VCESAT=10IB
Saturation Voltage---(mV)
Current Gain---HFE
6
100
Ta=25°C
Ta=75°C
100
125°C
75°C
25°C
VCE=10V
10
10
1
BTC2411N3
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT=38IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT=20IB
100
125°C
75°C
25°C
10
100
125°C
75°C
25°C
10
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
VBEON@VCE=10V
Ta=75°C
On Voltage---(mV)
Saturation Voltage---(mV)
VBESAT@IC=10IB
Ta=25°C
1000
75°C
25°C
1000
125°C
125°C
100
100
1
10
100
Collector Current---IC(mA)
1
1000
Capacitance vs Reverse-biased Voltage
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
100
Cib
Capacitance---(pF)
1000
10
Cob
VCE=5V
100
10
1
0.1
BTC2411N3
1
10
Reverse-biased Voltage---VR(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 5/8
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
Ambient Temperature---TA(℃)
200
Recommended Soldering Footprint
BTC2411N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTC2411N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2411N3
CYStek Product Specification
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2015.03.23
Page No. : 8/8
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
2X
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2411N3
CYStek Product Specification