MTN6515F3

Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 1/9
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN6515F3
BVDSS
ID @ VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=5V, ID=10A
RDS(ON)@VGS=3V, ID=3A
150V
20A
66mΩ(typ)
64mΩ(typ)
66mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
Outline
MTN6515F3
TO-263
G
G：Gate D：Drain S：Source
D S
Ordering Information
Device
MTN6515F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTTN6515F3
CYStek Product Specification
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.14mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
150
±16
20
14
60
20
28
10
100
50
-55~+175
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max*
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
1.5
40
62.5
Unit
°C/W
*When mounted on the minimum pad size (PCB mount), t≤10s.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTTN6515F3
Min.
Typ.
Max.
Unit
0.6
-
0.8
66
64
66
43
1.20
±100
1
25
75
75
75
-
V
nA
-
30
4.8
16
23
22
91
63
-
μA
mΩ
S
Test Conditions
VDS =VGS, ID=250μA
VGS=±16V, VDS=0V
VDS =120V, VGS =0V
VDS =100V, VGS =0V, TJ=125°C
VGS =10V, ID=15A
VGS =5V, ID=10A
VGS =3V, ID=3A
VDS =5V, ID=10A
nC
ID=10A, VDS=80V, VGS=5V
ns
VDS=75V, ID=1A, VGS=4.5V, RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
2282
120
66
-
-
0.86
50
120
20
60
1.3
-
pF
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 3/9
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTTN6515F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
60
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4V,3V
ID, Drain Current (A)
50
40
30
VGS=2V
20
1.2
1
0.8
0.6
10
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=1.5V
VGS=2.5V
VGS=1.8V
100
VGS=3V
VGS=4.5V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
ID=15A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=15A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 65 mΩ
0
0
0
MTTN6515F3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=80V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=10
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VDS=50V
6
4
2
ID=10A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
100
ID, Maximum Drain Current(A)
1ms
10
10ms
100ms
1s
1
DC
0.1
20
30
40
Qg, Total Gate Charge(nC)
50
25
100μs
RDSON
Limited
10
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
TC=25°C, Tj=175°C
VGS=10V, θJC=1.5°C/W
Single Pulse
20
15
10
5
VGS=10V, RθJC=1.5°C/W
0
0.01
0.1
MTTN6515F3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics (Cont.)
Power Derating Curve
70
120
60
100
50
PD, Power Dissipation(W)
ID, Drain Current(A)
Typical Transfer Characteristics
VDS=10V
40
30
20
80
60
40
20
10
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
0
25
50
75
100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTTN6515F3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTTN6515F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTTN6515F3
CYStek Product Specification
Spec. No. : C739F3
Issued Date : 2012.06.20
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B
D
2
F
α1
2
1
E
C
A
Device Name
6515
Date Code
□□□□
α2
3
I
G
J
K
L
α3
H
Style : Pin 1.Gate
2.Drain
3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTTN6515F3
CYStek Product Specification