Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode MOSFET MTN0410L3 BVDSS 100V ID 3A RDSON(MAX) 280mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D G：Gate D：Drain S：Source G Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1, 2 Total Power Dissipation @TC=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM Pd 100 ±20 3 2 12 2.7 0.02 -55~+175 Tj, Tstg Unit V A W W/°C °C *2. Pulse width≤ 300μs, Duty cycle ≤2% MTN0410L3 Preliminary CYStek Product Specification Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 20 45 (Note) Unit °C/W °C/W 2 Note : When mounted on a 1 in pad of 2 oz. copper; 120°C/W when mounted on minimum copper pad. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *1 RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 Min. Typ. Max. Unit Test Conditions 100 1 - 4 - 2.5 ±100 10 280 320 V V S nA μA mΩ mΩ VGS=0, ID=1mA VDS =10V, ID=1mA VDS =10V, ID=2.5A VGS=±20, VDS=0 VDS =80V, VGS =0 VGS =10V, ID=2A VGS =5V, ID=1A - 11.2 4.4 3 9 9.4 26.8 2.6 975 38 27 - - - 2 8 1.5 nC VDS=80V, VGS=5V, ID=3.5A ns VDS=30V, ID=1A, VGS=10V, RG=6Ω, RL=30Ω pF VGS=0V, VDS=25V, f=1MHz A IS=3A, VGS=0V, Tj=25°C V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTN0410L3 MTN0410L3 Package SOT-223 (Pb-free lead plating package) Preliminary Shipping 2500 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 3/7 Typical Characteristics MTN0410L3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) MTN0410L3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN0410L3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN0410L3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C792L3 Issued Date : 2010.07.16 Revised Date : Page No. : 7/7 SOT-223 Dimension A Marking: B Device Name C 1 2 Date Code 3 D E F H G Style: Pin 1.Gate 2.Drain 3.Source a1 I 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 a2 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN0410L3 Preliminary CYStek Product Specification