MTEH0N25J3

CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEH0N25J3
BVDSS
250V
ID@VGS=10V
VGS=10V, ID=3A
3.5A
720mΩ
VGS=6V, ID=2A
720mΩ
RDSON(TYP)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTEH0N25J3
G：Gate
S：Source
TO-252(DPAK)
G
D：Drain
D S
Ordering Information
Device
MTEH0N25J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=4A, VDD=50V
Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @TC=25℃
(Note 1)
Total Power Dissipation @TC=100℃
(Note 1)
Total Power Dissipation @TA=25℃
(Note 2)
Total Power Dissipation @TA=70℃
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
250
±30
3.5
2.5
1.0
0.8
8.5
4
16
3
30
15
2.5
1.6
-55~+175
(Note 1)
(Note 1)
(Note 2)
ID
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 3)
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
5
°C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50
°C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 3/9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
Unit
Test Conditions
250
2
-
3
720
720
1.6
4
±100
1
25
990
1080
-
V
V
nA
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VGS=±30V, VDS=0V
VDS =200V, VGS =0V
VDS =200V, VGS =0V, TJ=125°C
VGS =10V, ID=3A
VGS =6V, ID=2A
VDS =40V, ID=1.5A
-
9.2
1.6
3.8
6
16
15
20
334
26
12
-
-
0.75
60
73
3.5
8
1
-
μA
mΩ
S
nC
VDS=200V, ID=3A, VGS=10V
ns
VDS=125V, ID=1A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
IF=1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTEH0N25J3
CYStek Product Specification
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
8
ID, Drain Current (A)
7
6
5
10V,9V,8V,7V,6V,5V
4
3
2
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=4V
1
0.4
0
0
3
6
9
12
VDS, Drain-Source Voltage(V)
-75 -50 -25
15
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=4.5V
1000
VGS=6V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
100
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
4000
3
ID=3A
3600
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
3200
2800
2400
2000
1600
1200
800
400
2.5
VGS=10V, ID=3A
2
1.5
1
0.5
RDS(ON) @Tj=25°C : 720mΩ
0
0
0
MTEH0N25J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-65
-35
-5
25
55
85 115
Tj, Junction Temperature(°C)
145
175
CYStek Product Specification
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-65
100
-35
-5
85
115
145
175
Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
55
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=40V
Ta=25°C
Pulsed
0.01
0.001
8
6
4
VDS=200V
ID=3A
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
100μs
1ms
RDSON
Limited
10ms
1
100ms
1s
0.1
4
6
8
Qg, Total Gate Charge(nC)
10
12
DC
TC=25°C, Tj=175°C
VGS=10V, θ JC=5°C/W
Single Pulse
4
ID, Maximum Drain Current(A)
10
2
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
25
3.5
3
2.5
2
1.5
1
VGS=10V, RθJC=5°C/W
0.5
0
0.01
0.1
MTEH0N25J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
1000
9
900
8
VDS=10V
700
6
Power (W)
ID, Drain Current(A)
TJ(MAX) =175°C
TC=25°C
θ JC=5°C/W
800
7
5
4
600
500
400
3
300
2
200
1
100
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTEH0N25J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTEH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEH0N25J3
CYStek Product Specification
Spec. No. : C895J3
Issued Date : 2014.04.23
Revised Date : 2014.04.28
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
EH0
N25
Device
Name
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEH0N25J3
CYStek Product Specification