MTBA5C10H8

Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 1/13
CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8
N-CH
100V
3.0A
8.6A
120mΩ
125mΩ
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
P-CH
-100V
-2.7A
-7.8A
170mΩ
180mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN5×6
MTBA5C10H8
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA5C10H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5C10H8
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 2/13
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
TA=25 °C, VGS=10V (-10V)
Continuous Drain Current TA=70 °C, VGS=10V (-10V)
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
IDSM
IDM
TA=25 °C
±20
±20
3.0
-2.7
2.4
-2.2
8.6
-7.8
5.4
-4.9
25
-22
TC=25 °C
1.6 (Note 3)
21
PD
TC=100 °C
Operating Junction and Storage Temperature Range
Unit
V
A
2.5 (Note 3)
PDSM
TA=70 °C
Power Dissipation
ID
Limits
N-channel
P-channel
100
-100
W
8.4
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6
50 (Note 3)
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
100
1.0
-
120
125
8
3.0
±100
1
25
150
160
-
-
1237
38
27
8.6
16.4
32.8
15
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTBA5C10H8
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=100V, VGS=0V
VDS=80V, VGS=0, Tj=125°C
ID=2.5A, VGS=10V
ID=2A, VGS=5V
VDS=5V, ID=2.5A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
V
nA
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Body Diode
*IS
-
16.5
2.9
2.7
-
*ISM
-
-
-
-
3
12
1.3
-
*VSD
-
*trr
*Qrr
-
0.79
18
15
nC
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 3/13
VDS=80V, ID=3A, VGS=10V
A
V
VGS=0V, IS=3A
ns
nC
IF=3A dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
-100
-1.0
-
170
180
6
-3.0
±100
-1
-25
220
230
-
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*IS
-
1406
56
33
6.4
16.4
116
30.4
21.2
3.1
4.0
-
-
-
*ISM
-
-
*VSD
-
V
VGS=0V, IS=-2.5A
*trr
*Qrr
-
-0.8
15.5
11.7
-2.7
-12
-1.3
-
ns
nC
IF=-2.7A dIF/dt=100A/μs
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-80V, VGS=0
VDS=-70V, VGS=0, Tj=125°C
ID=-1.5A, VGS=-10V
ID=-1A, VGS=-5V
VDS=-5V, ID=-1.5A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-80V, ID=-2.7A, VGS=-10V
V
nA
μA
mΩ
Dynamic
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTBA5C10H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 4/13
Recommended Soldering Footprint
unit : mm
MTBA5C10H8
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 5/13
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
10
BVDSS, Normalized Drain-Source
Breakdown Voltage
12
10V, 9V, 8V, 7V, 6V, 5V, 4V
8
6
VGS=3V
4
1.2
1
0.8
ID=250μA,
VGS=0V
2
0.6
0
0
1
-75 -50 -25
5
2
3
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=2.5V
1000
VGS=4.5V
VGS=10V
VGS=3V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(on), Normalized Static DrainSource On-State Resistance
300
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
280
ID=2.5A
260
240
220
200
180
160
140
2
VGS=10V, ID=2.5A
1.6
1.2
0.8
RDSON@Tj=25°C : 120mΩ typ
120
0.4
100
0
MTBA5C10H8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 6/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
VDS=50V
8
6
VDS=80V
4
2
ID=3A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
3.5
RDSON
Limite
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μ s
1ms
10ms
1
100ms
0.1
1s
TA=25°C, Tj=150°C
VGS=10V, θ JA=50°C/W
Single Pulse
0.01
DC
0.001
3
2.5
2
1.5
TA=25°C
VGS=10V
RθJA=50°C/W
1
0.5
0
0.1
MTBA5C10H8
1
10
100
VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 7/13
Typical Characteristics(Cont.) : Q1( N-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
1000
Typical Transfer Characteristics
12
TJ(MAX) =150°C
TA=25°C
θ JA=50°C/W
100
ID, Drain Current(A)
Power (W)
VDS=10V
10
10
8
6
4
2
1
0.0001 0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
1000
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA5C10H8
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 8/13
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10
-I D, Drain Current (A)
1.4
10V
9V
8V
7V
6V
5V
8
-BVDSS, Normalized Drain-Source
Breakdown Voltage
12
4V
6
4
-VGS=3V
2
1.2
1
0.8
-ID=250μA,
VGS=0V
0.6
0
0
1
-75 -50 -25
5
2
3
4
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VGS=2.5V
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
-VGS=4.5V
-VGS=10V
1000
-VGS=3V
100
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
-IDR, Reverse Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
380
R DS(on), Normalized Static DrainSource On-State Resistance
420
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-ID=1.5A
340
300
260
220
180
140
1.8
1.6
-VGS=10V, -ID=1.5A
1.4
1.2
1
0.8
RDSON@Tj=25°C : 170mΩtyp
0.6
0.4
100
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA5C10H8
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 9/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
100
C oss
Crss
1.6
-ID=250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
-VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=-50V
8
6
4
VDS=-80V
2
ID=-2.7A
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
3.5
RDSON
Limite
10
-I D, Maximum Drain Current(A)
100
-I D, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μ s
1ms
1
10ms
100ms
1s
0.1
TA=25°C, Tj=150°C
VGS=10V, θ JA=50°C/W
Single Pulse
0.01
DC
3
2.5
2
1.5
TA=25°C
-VGS=10V
RθJA=50°C/W
1
0.5
0
0.001
0.1
MTBA5C10H8
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 10/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
1000
12
TJ(MAX) =150°C
TA=25°C
θ JA=50°C/W
100
- ID, Drain Current(A)
Power (W)
VDS=-10V
10
10
8
6
4
2
1
0.0001 0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
1000
0
1
2
3
4
- VGS , Gate-Source Voltage(V)
5
6
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA5C10H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 11/13
Reel Dimension
Carrier Tape Dimension
MTBA5C10H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5C10H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 13/13
DFN5×6 Dimension
Marking:
Device
Name
Date
Code
BA5
C10
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 REF
4.90
5.10
1.60 REF
DIM
A
A1
b
c
D
F
Inches
Min.
Max.
0.031
0.039
0.000
0.002
0.014
0.019
0.010 REF
0.193
0.201
0.063 REF
DIM
E
e
H
L1
G
K
Millimeters
Min.
Max.
5.70
5.90
1.27 BSC
5.95
6.20
0.10
0.18
0.60 REF
1.60 REF
Inches
Min.
Max.
0.224
0.232
0.050 BSC
0.234
0.244
0.004
0.007
0.024 REF
0.063 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA5C10H8
CYStek Product Specification