MTB030N04N3

Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 1/ 9
CYStech Electronics Corp.
40V N-Channel Enhancement Mode MOSFET
MTB030N04N3
BVDSS
ID @VGS=10V
VGS=10V, ID=7.9A
RDSON(TYP)
VGS=4.5V, ID=7.3A
40V
8A
25.3mΩ
34.2mΩ
Features
• Low on-resistance
• Low voltage gate drive
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB030N04N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTB030N04N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB030N04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=125C
Continuous Drain Current @ VGS=10V, TA=25C
(Note 3)
Continuous Drain Current @ VGS=10V, TA=70C
(Note 3)
Pulsed Drain Current (Note 1, 2)
TC=25°C
TC=125°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDSM
IDM
PD
PDSM
Tj, Tstg
Limits
40
±20
8
4.6
4.7
3.8
32
3
1
1.25
0.8
-55~+175
Unit
V
A
W
C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient , max
Thermal Resistance, Junction-to-Case , max
(Note 3)
Symbol
RθJA
RθJC
Limit
100
50
Unit
C/W
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
3. Surface mounted on 1 in² copper pad of FR-4 board at steady state; 417C/W when mounted on minimum copper
pad.
4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
MTB030N04N3
Min.
Typ.
Max.
Unit
40
1.0
-
32
9.1
25.3
34.2
2.5
±100
1
50
150
34
47
65
46
V
mV/℃
V
S
nA
μA
m
Test Conditions
VGS=0V, ID=250μA
Reference to 25℃, ID=250μA
VDS=VGS, ID=250μA
VDS=5V, ID=7.9A
VGS=±20V, VDS=0V
VDS=40V, VGS=0V
VDS=40V, VGS=0V, Tj=125C
VDS=40V, VGS=0V, Tj=175C
VGS=10V, ID=7.9A
VGS=10V, ID=7.9A, Tj=125C
VGS=10V, ID=7.9A, Tj=175C
VGS=4.5V, ID=7.3A
CYStek Product Specification
CYStech Electronics Corp.
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
694
36
40
6.8
15.8
22
5.4
11
2.02
2.05
1.9
-
-
0.82
6.7
2.9
3.8
32
1.2
-
-
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 3/ 9
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=20V, ID=1A, VGS=10V, RG=1Ω
nC
VDS=20V, ID=3.9A, VGS=10V
Ω
f=1MHz
A
V
ns
nC
VGS=0V, IS=5.4A
IF=3.9A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTB030N04N3
CYStek Product Specification
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
32
28
4V
24
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V, 5V
20
3.5V
16
12
8
3V
4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=2.5V
0.4
0
0
1
2
3
VDS, Drain-Source Voltage(V)
4
-75
5
-25
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
100
3V
4.5V
VGS=0V
Tj=25°C
1
0.8
0.6
Tj=150°C
0.4
10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
1
2
3
4
5
6
7
8
IDR, Reverse Drain Current(A)
9
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
2
270
ID=7.9A
240
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
210
180
150
120
90
60
30
VGS=10V, ID=7.9A
1.6
1.2
0.8
RDSON@Tj=25°C : 25.3mΩ typ.
0.4
0
0
MTB030N04N3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VG S(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
Coss
100
Crss
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
10
Pulsed
Ta=25°C
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
VDS=5V
1
0.1
0.01
0.001
VDS=20V
ID=3.9A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs Case Temperature
100
10
10
ID, Maximum Drain Current(A)
ID, Drain Current(A)
9
100μs
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C,VGS=10V
RθJA=100°C/W, Single Pulse
0.01
0.01
DC
7
6
5
4
3
2
VGS=10V, RθJC=50°C/W
1
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTB030N04N3
8
100
1000
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
32
9
TJ(MAX) =150°C
TA=25°C
RθJA=100°C/W
8
24
20
Power (W)
ID, Drain Current(A)
10
VDS=5V
28
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
16
12
7
6
5
4
3
8
2
4
1
0
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB030N04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB030N04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB030N04N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 9/ 9
SOT-23 Dimension
Marking:
A
L
3
TE
30N04
B
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
H
K
J
*: Typical
DIM
Inches
Min.
Max.
0.1063 0.1220
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.70
3.10
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0079
0.0128
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.20
0.32
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB030N04N3
CYStek Product Specification