MTEF1P15AN6

Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15AN6
Description
The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Equivalent Circuit
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
MTEF1P15AN6
G：Gate
S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS
TC=25 °C
TC=70 °C
TA=25 °C
TA=70 °C
(Note 1)
ID
(Note 1)
Pulsed Drain Current (Note 2, 3)
IDM
TC=25 °C
TC=70 °C
Total Power Dissipation
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
PD
Tj, Tstg
Limits
-150
±20
-1.7
-1.4
-1.3
-1.0
-6.8
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTEF1P15AN6
(Note 1)
Symbol
Rth,j-c
RθJA
Value
39
62.5
Unit
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 2/9
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
-150
-2
-
-0.1
-2.9
554
585
2.9
-4
±100
-100
-10
820
850
-
V
V/℃
V
S
VGS=0, ID=-250μA
Reference to 25℃, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-120V, VGS=0, Tj=25℃
VDS=-120V, VGS=0, Tj=55℃
ID=-1.4A, VGS=-10V
ID=-1A, VGS=-6V
VDS=-10V, ID=-1.4A
571
29
17
9
6
23
8
11
2.5
2.4
-
pF
VDS=-30V, VGS=0, f=1MHz
ns
VDS=-75V, ID=-1A, VGS=-10V, RG=1Ω
nC
VDS=-75V, ID=-1A, VGS=-10V
-0.77
60
120
-1.7
-6.8
-1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
*Trr
Qrr
-
nA
μA
mΩ
A
V
ns
nC
IS=-1A,VGS=0V
IS=-1A,VGS=0V,dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTEF1P15AN6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTEF1P15AN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 3/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
-ID, Drain Current (A)
6
5
4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
7
-VGS=5V
3
2
-VGS=4V
1
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-4.5V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=-6V
1000
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
100
0.01
0.1
1
-ID, Drain Current(A)
0
10
1200
10
4
6
8
-IDR, Reverse Drain Current (A)
R DS(ON) , Normalized Static DrainSource On-State Resistance
2
1100
ID=-1.4A
1000
900
800
700
600
500
1.8
VGS=-10V, ID=-1.4A
1.6
1.4
1.2
1
0.8
RDSON @Tj=25°C: 554mΩ
0.6
0.4
400
0
MTEF1P15AN6
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
1000
Ciss
100
C oss
Crss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
10
VDS=-100V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-10V
Pulsed
Ta=25°C
8
VDS=-75V
VDS=-50V
6
4
2
ID=-1A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Drain Current vs CaseTemperature
10
2
100μs
RDS(ON)
Limit
ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C
RθJA=62.5°C/W, VGS=-10V
Single Pulse
1s
DC
0.01
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
VGS=-10V, RθJA=39°C/W
0.2
0
0.1
MTEF1P15AN6
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 5/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
1000
7
Peak Transient Power (W)
-ID, Drain Current(A)
900
VDS=-10V
6
5
4
3
2
1
TJ(MAX) =150°C
TA=25°C
θJA=62.5°C/W
800
700
600
500
400
300
200
100
0
0.0001 0.001
0
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
0.01
10
100
1000
140
160
Power Derating Curve
Power Derating Curve
4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
3.6
Mounted on FR-4 board
with 1 in² pad area
PD, Power Dissipation(W)
PD, Power Dissipation(W)
0.1
1
Pulse Width(s)
0.6
0.4
0.2
0
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
0
20
40
60
80 100 120
TC, Case Temperature(℃)
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTEF1P15AN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 6/9
Recommended Soldering Footprint
MTEF1P15AN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTEF1P15AN6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEF1P15AN6
CYStek Product Specification
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 9/9
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
Device Name
●
●
FP15
□□□□
Date Code
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
Pin 4. Source
Pin 5. Drain
Pin 6. Drain
Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
DIM
A
A1
A2
b
c
D
Min.
0.041
0.000
0.041
0.012
0.004
0.111
Inches
Max.
0.049
0.004
0.045
0.020
0.008
0.119
DIM
E
E1
e
e1
L
θ
Millimeters
Min.
Max.
1.500
1.700
2.650
2.950
0.950 (BSC)
1.800
2.000
0.300
0.600
0°
8°
(D)
(D)
(G)
(S)
(D)
(D)
Inches
Min.
Max.
0.059
0.067
0.104
0.116
0.037 (BSC)
0.071
0.079
0.012
0.024
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEF1P15AN6
CYStek Product Specification