MTN2510E3

CYStech Electronics Corp.
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN2510E3
BVDSS
100V
ID
50A
17mΩ
RDSON(TYP) @ VGS=10V, ID=30A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
TO-220
MTN2510E3
G：Gate
D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
TC=25°C
Power Dissipation
TC=100°C
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
100
±30
50
35
150
30
45
22.5
155
61
-55~+175
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTN2510E3
CYStek Product Specification
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.97
62.5
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
Test Conditions
100
1.5
50
2.4
38
17
-
4.0
±100
1
25
30
-
V
V
S
nA
μA
μA
mΩ
A
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=30A
VGS=±30
VDS =80V, VGS =0V
VDS =70V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VDS =10V, VGS =10V
25
6.1
9.2
19
67
75
34
1888
236
124
2
-
0.88
120
380
50
150
1.3
-
*RDS(ON)
*ID(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
nC
ID=30A, VDS=50V, VGS=10V
ns
VDS=50V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=25A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2510E3-0-UB-S
MTN2510E3
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 3/7
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
150
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
ID, Drain Current (A)
120
90
VGS=5V
60
VGS=4V
30
1.2
1
0.8
0.6
VGS=3V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
ID=250μA,
VGS=0V
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
ID=30A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=30A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 17mΩ
0
0
0
MTN2510E3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
180
10
VDS=50V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
VDS=20V
8
6
4
2
ID=30A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
RDSON
Limited
ID, Maximum Drain Current(A)
1000
100μs
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
1ms
10ms
100ms
1s
10
DC
1
TC=25°C, Tj=175°C
VGS=10V, θJC=0.97°C/W
Single Pulse
0.1
50
40
30
20
10
VGS=10V, RθJC=0.97°C/W
0
0.01
0.1
MTN2510E3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 5/7
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
3000
140
VDS=5V
2500
100
Power (W)
ID, Drain Current(A)
120
80
60
TJ(MAX) =175°C
TC=25°C
θJC=0.97°C/W
2000
1500
1000
40
500
20
0
0
0
2
4
6
8
10
VGS , Gate-Source Voltage(V)
12
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=0.97°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTN2510E3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2510E3
CYStek Product Specification
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 7/7
CYStech Electronics Corp.
TO-220 Dimension
Marking:
Device Name
Date Code
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
CYS
N2510
□□□□
1
2 3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Millimeters
Min.
Max.
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010 10.310
8.900
8.500
DIM
A
A1
b
b1
c
c1
D
E
Inches
Min.
Max.
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.406
0.394
0.350
0.335
DIM
E1
e
e1
F
h
L
L1
Φ
Millimeters
Min.
Max.
12.060 12.460
2.540*
4.980
5.180
2.890
2.590
0.000
0.300
13.400 13.800
3.560
3.960
3.735
3.935
Inches
Min.
Max.
0.475
0.491
0.100*
0.196
0.204
0.114
0.102
0.000
0.012
0.528
0.543
0.140
0.156
0.147
0.155
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2510E3
CYStek Product Specification