Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 1/6 CYStech Electronics Corp. 1A /90V Snubber Damping Rectifier QDL3 Features • High current capability • Smoothly soft reverse recovery time (trr) • Low profile surface mounted package in order to minimize board space • Pb-free lead plating and halogen-free package Symbol Outline QDL3 SOT-223 N K A A：Anode K：Cathode N：Not Connected Ordering Information Device QDL3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 :2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name QDL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (TA=25℃, unless otherwise noted) Parameters Repetitive peak reverse voltage RMS voltage Continuous reverse voltage Conditions Single phase half wave, 60Hz @TJ=25°C Single phase half wave, 60Hz @TJ=25°C 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Forward rectified current Repetitive Peak Forward Current Forward surge current Power Dissipation Value 90 63 90 Units V V V IF(AV) 1 A IFRM 1.57 A IFSM 6 A PD (Note) Maximum reverse recovery time Storage temperature range Operating junction temperature range Symbol VRRM VRMS VR IF=0.5A, IR=1.0A, RR=0.25A trr Tstg Tj 1 3 500 -55~+150 -55~+150 W ns °C °C Note :The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Characteristics (TA=25°C, unless otherwise noted) Characteristic Reverse Voltage Forward Voltage Reverse Leakage Current Junction Capacitance QDL3 Symbol VR VF 1 VF 2 IR IR CJ Condition IR=100μA IF=100mA IF=500mA VR=90V VR=90V, TA=125°C VR=1V, f=1MHz Min. Typ Max. Unit 90 - - V - 7 0.95 1.2 100 10 - V nA μA pF CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 3/6 Typical Characteristics Power Derating Curves Forward Current vs Forward Voltage 10000 Power Dissipation---PD(W) 3 Instantaneous Forward Current---IF (mA) 3.5 See Note on page 2 2.5 2 1.5 1 0.5 Pulse width=300μs, 1% Duty cycle 1000 125℃ 100 25°C 75°C 10 -40°C 0 1 0 50 100 150 200 0 Ambient Temperature ---Ta(℃ ) 0.2 0.4 0.6 0.8 1 Forward Voltage---VF(V) 1.2 1.4 Junction Capacitance vs Reverse Voltage Reverse Leakage Current vs Reverse Voltage 100 100 Tj=125℃ Junction Capacitance---C J(pF) Reverse Leakage Current---I R (nA) 0℃ 10 Tj=75℃ 1 0.1 10 Tj=25℃ Tj=25℃, f=1.0MHz 1 0.01 0 10 20 30 40 50 60 70 80 90 100 Reverse Voltage---VR (V) 0.1 1 10 100 Reverse Voltage---VR (V) Recommended soldering footprint QDL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension QDL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. QDL3 CYStek Product Specification Spec. No. : C203L3 Issued Date : 2013.11.20 Revised Date : Page No. : 6/6 CYStech Electronics Corp. SOT-223 Dimension A Marking: Device Code B Year code: 0→2010, 1→2011, 2→2012, …etc. C 1 2 3 QD □□ month code: 1~9, A,B,C D E F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Style: Pin 1. Anode 2. Cathode 3. Not Connected *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. QDL3 CYStek Product Specification