MTN2572F3

Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN2572F3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=20A
150V
44A
50mΩ (max)
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTN2572F3
TO-263
G：Gate
D：Drain
S：Source
G
D
S
Ordering Information
Device
MTN2572F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2572F3
CYStek Product Specification
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
TC=25℃
Power Dissipation
TC=100℃
Operating Junction and Storage Temperature
VDS
VGS
150
±30
44
31
120
18
20
10
156
78
-55~+175
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.96
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
*ID(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
MTN2572F3
Min.
Typ.
Max.
150
1.5
44
34
33
-
4.0
±100
1
25
50
-
-
30
10
8
20
18
47
20
2249
225
118
-
Unit
Test Conditions
mΩ
A
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±30V
VDS =120V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
VDS =10V, VGS =10V
nC
ID=20A, VDS=80V, VGS=10V
ns
VDS=75V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
V
S
nA
μA
CYStek Product Specification
CYStech Electronics Corp.
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
2
-
120
380
44
120
1.3
-
Ω
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 3/9
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=25A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN2572F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
160
ID, Drain Current(A)
5V,6V,7V,8V,9V,10V
120
VGS=4V
80
VGS=3V
40
1.2
1
0.8
0.6
VGS=2V
0.4
-100
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
ID=250μA,
VGS=0V
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
VGS=4.5V
5V
6V
7V
8V
9V
10V
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
90
ID=20A
80
70
60
50
40
30
20
10
VGS=10V, ID=20A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 33 mΩ
0.4
0
0
MTN2572F3
4
8
12
16
VGS, Gate-Source Voltage(V)
20
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 5/9
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=80V
ID=20A
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
Maximum Safe Operating Area
5
10
15
20
25
30
Total Gate Charge---Qg(nC)
35
40
Typical Transfer Characteristics
1000
160
VDS=10V
140
100
100μs
RDS(ON)
Limit
ID, Drain Current (A)
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
1ms
10ms
10
100ms
1s
1
TC=25°C, Tj=150°, VGS=10V
RθJC=0.96C/W, Single Pulse
DC
120
100
80
60
40
20
0
0.1
0.1
MTN2572F3
1
10
100
VDS, Drain-Source Voltage(V)
1000
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics(Cont.)
Maximum Drain Current vs Case Temperature
50
ID, Maximum Drain Current(A)
45
40
35
30
25
20
15
10
VGS=10V, RθJC=0.96°C/W
5
0
25
50
75
100
125
150
TC, Case Temperature(°C)
175
200
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
1.ZθJC(t)=0.96C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTN2572F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN2572F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2572F3
CYStek Product Specification
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B
D
2
F
α1
2
1
E
C
A
2572
Device Name
Date Code
□□□□
Style : Pin 1.Gate
2.Drain
α2
3
I
G
J
K
L
α3
3.Source
H
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2572F3
CYStek Product Specification