MTNK7S3

CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 1/7
N-CHANNEL MOSFET
MTNK7S3
Description
The MTNK7S3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
Outline
MTNK7S3
D
SOT-323
D
G
S
G:Gate
S:Source
D:Drain
G
S
Ordering Information
Device
MTNK7S3-0-T1-G
MTNK7S3
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Limits
60
±20
300
800
*1
300
800
*1
200
*2
1500
*3
+150
-55~+150
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
VGS(th)
1
2.5
IGSS
±10
IDSS
1
1.5
3
RDS(ON)*
1.7
3.2
1.9
3.3
GFS
100
Ciss
29
Coss
4
Crss
2.8
-
Unit
V
V
μA
μA
mS
Test Conditions
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=500mA, VGS=10V
ID=100mA, VGS=5V
ID=100mA, VGS=4.5V
VDS=10V, ID=100mA
pF
VDS=25V, VGS=0, f=1MHz
Ω
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTNK7S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 3/7
Typical Characteristics
Typical Output Characteristics
1.4
Typical Transfer Characteristics
1.2
6V
4.5V
1.0
4V
0.8
3.5V
0.6
0.4
3V
0.2
2.5V
VGS=2V
2
4
6
8
Drain-Source Voltage -VDS(V)
10
1
0.8
0.6
0.4
0.2
0
0.0
0
VDS=10V
1.2
Drain Current -ID(A)
Drain Current - ID(A)
1.4
10V
0
12
2
Static Drain-Source On-State resistance vs Drain Current
4
6
8
10
Gate-Source Voltage-VGS(V)
12
Reverse Drain Current vs Source-Drain Voltage
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
1.2
VGS=2.5V
VGS=4.5V
1
Tj=25°C
0.8
Tj=125°C
0.6
0.4
VGS=10V
0.2
1
0.001
0.01
0.1
Drain Current-ID(A)
0
1
7
6
6
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
7
5
4
3
ID=100mA
4
3
2
1
0
0
MTNK7S3
2
4
6
8
Gate-Source Voltage-VGS(V)
10
VGS=10V, ID=100mA
5
1
0
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 4/7
Characteristic Curves(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
Threshold Voltage-VGS(th)(V)
100
Capacitance---(pF)
Ciss
10
C oss
Crss
ID=250uA
1.4
1.2
1
0.8
1
0.1
1
10
Drain-Source Voltage -VDS(V)
100
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
MTNK7S3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTNK7S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTNK7S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2013.09.09
Page No. : 7/7
SOT-323 Dimension
Marking:
TE
72
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTNK7S3
CYStek Product Specification