CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP2603N6 Description The MTP2603N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating package MTP2603N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Symbol Limits Unit VDS -20 ±8 -5 -4 -20 2 0.016 -55~+150 62.5 V V A A A W W / °C °C °C/W VGS (Note 1) ID (Note 1) ID Pulsed Drain Current (Note 2, 3) IDM Total Power Dissipation @ TA=25 °C Linear Derating Factor Pd Operating Junction Temperature and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Tj, Tstg Rth,ja Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% MTP2603N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 2/7 Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS IDSS *RDS(ON) *GFS Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Min. -20 -0.5 - Typ. -0.1 9 740 167 126 5.9 3.6 32.4 2.6 10.6 2.32 3.68 Max. -1.2 ±100 -1 -10 53 65 120 250 1200 16 - Unit V V/℃ V nA μA μA S Test Conditions VGS=0, ID=-250μA Reference to 25℃, ID=-1mA VDS=VGS, ID=-250μA VGS=±8V, VDS=0 VDS=-20V, VGS=0, Tj=25℃ VDS=-16V, VGS=0, Tj=55℃ ID=-4.5A, VGS=-10V ID=-4.2A, VGS=-4.5V ID=-2.0A, VGS=-2.5V ID=-1.0A, VGS=-1.8V VDS=-5V, ID=-2.8A pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, ID=-4.2A, VGS=-10V, RG=6Ω, RD=3.6Ω nC VDS=-16V, ID=-4.2A, VGS=-4.5V, mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Source Drain Diode Symbol Min. Typ. Max. Unit Test Conditions *VSD *Trr Qrr - 27.7 22 -1.2 - V ns nC IS=-1.2A,VGS=0V IS=-4.2A,VGS=0V,dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTP2603N6 MTP2603N6 Package SOT-26 (Pb-free lead plating package) Shipping Marking 3000 pcs / Tape & Reel 2603 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 3/7 Characteristic Curves MTP2603N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 4/7 Characteristic Curves(Cont.) MTP2603N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTP2603N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP2603N6 CYStek Product Specification Spec. No. : C394N6 Issued Date : 2007.12.28 Revised Date : 2011.10.31 Page No. : 7/7 CYStech Electronics Corp. SOT-26 Dimension A D Marking: d1 d2 6 5 4 Style: Pin 1. Drain Pin 2. Drain Pin 3. Gate Pin 4. Source Pin 5. Drain Pin 6. Drain B C 1 2 3 (D) (D) (G) (S) (D) (D) Date Code E 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 I F L H J G Inches Min. Max. 0.1063 0.1220 0.1024 0.1181 0.0551 0.0709 0.0748 REF 0.0374 REF 0.0374 REF 0.0118 0.0217 DIM A B C D d1 d2 E 2603 □□□□ Device Name Millimeters Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.90 REF 0.95 REF 0.95 REF 0.30 0.55 K DIM F G H I J K L Inches Min. Max. 0.0472 REF 0 0.0039 0.0079 0.0047 REF 0.0146 REF 0.0236 REF 0° 10° Millimeters Min. Max. 1.20 REF 0 0.10 0.20 0.12 REF 0.37 REF 0.60 REF 0° 10° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2603N6 CYStek Product Specification