CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE50N15H8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=4.6A RDS(ON)@VGS=6V, ID=3.9A 150V 26A 16A 4.6A 3.7A 41mΩ(typ) 47mΩ(typ) Outline DFN5×6 MTE50N15H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTE50N15H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE50N15H8 CYStek Product Specification Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy @ L=1mH, ID=10Amps, VDD=50V TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol Limits (Note 1) VDS VGS (Note 1) ID IDM IAS 150 ±30 26 16 4.6 3.7 30 15 EAS 50 (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 1) (Note 1) (Note 2) (Note 2) IDSM Unit V A mJ 78 31.2 2.5 1.6 -55~+150 PD PDSM Tj, Tstg W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA (Note 4) Value 1.6 50 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. . Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS MTE50N15H8 Min. Typ. Max. Unit Test Conditions 150 2 - 0.12 11 - 4 ±100 1 25 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=4.6A VGS=±30V VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=125°C μA CYStek Product Specification CYStech Electronics Corp. *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 41 47 51 65 29 7 9.7 18.4 21.6 40.8 12.4 1379 155 63 1.1 45 37 43 82 25 2069 233 95 - 0.72 0.76 49 109 4.6 30 1.2 1.2 - Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 3/ 9 mΩ VGS =10V, ID=4.6A VGS =6V, ID=3.9A nC VDS=75V, ID=4.6A, VGS=10V ns VDS=75V, ID=4.6A, VGS=10V, RG=6Ω pF VGS=0V, VDS=30V, f=1MHz Ω f=1MHz A V IS=2A, VGS=0V IS=4.6A, VGS=0V ns nC VGS=0, IF=4.6A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTE50N15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 10V, 9V, 8V, 7V VGS=6.5V 20 10 VGS=6V VGS=5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=5.5V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V VGS=10V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.5 R DS(ON) , Normalized Static DrainSource On-State Resistance 500 450 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=4.6A 400 350 300 250 200 150 100 50 VGS=10V, ID=4.6A 2.0 1.5 1.0 0.5 RDS(ON) @Tj=25°C :41mΩ typ 0.0 0 0 MTE50N15H8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 5/ 9 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C os 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=75V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=50V 6 VDS=100V 4 2 ID=..4.6A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 24 Total Gate Charge---Qg(nC) 28 32 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 100 ID, Maximum Drain Current(A) RDS(ON) Limit ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 100μs 1 1ms 10ms 100ms 0.1 TA=25°C, Tj=150°, VGS=10V RθJA=50°C/W, Single Pulse 1s DC 0.01 0.1 MTE50N15H8 1 10 100 VDS, Drain-Source Voltage(V) 25 20 15 10 5 VGS=10V, RθJC=1.6°C/W 0 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 400 30 VDS=10V 350 TJ(MAX) =150°C TA=25°C R θJA=50°C/W 300 20 Power (W) ID, Drain Current (A) 25 15 250 200 150 10 100 5 50 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*Rθ JA(t) 4.RθJA=50 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE50N15H8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension Pin #1 MTE50N15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE50N15H8 CYStek Product Specification Spec. No. : C931H8 Issued Date : 2015.05.25 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. DFN5×6 Dimension Marking: Device Name Date Code E50 N15 8-L8-Lead ead power pakPlastic PlasticPackage Package DFN5×6 CYCYS StekPackage Package Code: Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.40 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.055 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 4.00 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.157 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE50N15H8 CYStek Product Specification