MTN4N60I3

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 1/11
BVDSS : 600V
RDS(ON) : 2.8Ω(typ.)
MTN4N60I3
ID : 4A
Description
The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
MTN4N60I3
G：Gate
D：Drain
S：Source
MTN4N60I3
TO-251
TO-251S
G
G
D S
D S
CYStek Product Specification
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 2/11
CYStech Electronics Corp.
Ordering Information
Device
MTN4N60I3-0-UA-G
MTN4N60I3S-0-UA-G
Package
TO-251
(RoHS compliant and halogen-free package)
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
600
±30
4*
2.4*
16*
34.9
4
5
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
Pd
50
0.4
-55~+150
W
W/°C
°C
Tj, Tstg
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=4mH, VG=10V, starting TJ=+25℃.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN4N60I3
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.65
2
2.8
4.0
±100
1
10
3.2
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=2A
VGS=±30
VDS =600V, VGS =0
VDS =480V, VGS =0, Tj=125°C
VGS =10V, ID=2A
12.8
2.4
7.1
15
21
30
22
560
51
7.2
-
nC
ID=4A, VDD=480V, VGS=10V
ns
VDD=300V, ID=4A, VGS=10V,
RG=25Ω, RD=75Ω
pF
VGS=0V, VDS=25V, f=1MHz
277
2.1
4
16
1.5
-
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
A
V
ns
μC
IS=4A, VGS=0V
VGS=0, IF=4A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N60I3
CYStek Product Specification
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 4/11
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
8
15V
10V
9V
7V
4
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
Drain Current - I D(A)
6
6V
5.5V
2
5V
VGS=4.5V
10
20
30
Drain-Source Voltage -VDS(V)
6
5
4
3
2
ID=2A,
VGS=10V
1
0
0
7
0
-100
40
-50
0
50
100
Ambient Temperature-Ta(°C)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
8
5
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
Ta=25°C
VGS=10V
4.5
4
3.5
3
6
VDS=30V
4
VDS=10V
2
2.5
0
2
0.1
1
Drain Current-I D(A)
0
10
Ta=25°C
ID=2A
Reverse Drain Current-I DR (A)
Static Drain-Source On-State
Resistance-R DS(ON)(Ω)
20
15
Body Diode Forward Voltage Variation vs Source
Current and Temperature
100
10
8
10
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
9
5
7
6
5
4
3
2
VGS=0V
10
Ta=150°C
1
Ta=25°C
1
0.1
0
4
MTN4N60I3
6
8
10
Gate-Source Voltage-VGS (V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 5/11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
800
Drain-Source Breakdown Voltage
BVDSS(V)
Capacitance-(pF)
1000
Ciss
100
Coss
10
f=1MHz
Crss
1
0
5
10
15
20
25
Drain-to-Source Voltage-VDS(V)
750
700
650
ID=250μA,
VGS=0V
600
-100
30
-50
0
50
100
150
200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
VDS=120V
Drain Current --- ID(A)
10
Gate-Source Voltage---VGS(V)
10μs
100μs
1ms
10ms
1
100ms
Operation in this area is
limited by RDS(ON)
0.1
DC
Single pulse
Tc=25°C; Tj=150°C
VDS=300V
VDS=480V
8
6
4
ID=4A
2
0
0.01
1
10
10
100
Drain-Source Voltage -VDS(V)
1000
0
5
10
15
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
5
4
3.5
3
(A)
Maximum Drain Current---I D
4.5
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN4N60I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 6/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN4N60I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 7/11
Test Circuits and Waveforms
MTN4N60I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 8/11
Test Circuits and Waveforms(Cont.)
MTN4N60I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 9/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4N60I3
CYStek Product Specification
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 10/11
CYStech Electronics Corp.
TO-251 Dimension
Marking:
Product
Name
Date
Code
CYS
4N60
□□□□
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Inches
Min.
Max.
0.2500
0.2618
0.2047
0.2126
0.5709
0.5866
0.0276
0.0354
0.0199
0.0276
0.0886
0.0925
0.0886
0.0925
0.0169
0.0228
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
6.35
6.65
5.20
5.40
14.50
14.90
0.70
0.90
0.50
0.70
2.25
2.35
2.25
2.35
0.43
0.58
DIM
I
J
K
L
M
N
S
T
Inches
Min.
Max.
0.0866
0.0945
0.2126
0.2244
0.2992
0.3071
0.0453
0.0492
0.0169
0.0228
0.1181 REF
0.1969 REF
0.1496 REF
Millimeters
Min.
Max.
2.20
2.40
5.40
5.70
7.60
7.80
1.15
1.25
0.43
0.58
3.00 REF
5.00 REF
3.80 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
MTN4N60I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 11/11
TO-251S Dimension
Marking :
Device Name
Date Code
3-Lead TO-251S Plastic Package
CYStek Package Code: I3
Style : Pin 1. Gate 2. Drain
3. Source
*: Typical
Inches
Min.
Max.
0.2559
0.2638
0.2020
0.2126
0.4094
0.4331
0.0280
0.0319
0.0858
0.0941
0.0858
0.0941
0.0181
0.0220
0.0902
0.0937
DIM
A
B
C
E
F
G
H
I
Millimeters
Min.
Max.
6.50
6.70
5.13
5.46
10.40
11.00
0.71
0.81
2.18
2.39
2.18
2.39
0.46
0.56
2.29
2.38
DIM
J
K
L
M
S
T
U
V
Inches
Min.
Max.
0.2362
0.2441
0.1299
0.1457
0.0358
0.0437
0.0181
0.0220
0.1902 REF
0.2106 REF
0.0701 REF
0.0299 REF
Millimeters
Min.
Max.
6.00
6.20
3.30
3.70
0.91
1.11
0.46
0.56
4.83 REF
5.35 REF
1.78 REF
0.76 REF
Notes: 1.Controlling dimension: inch.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4N60I3
CYStek Product Specification