MTB55N10Q8

Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 1/9
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
MTB55N10Q8
BVDSS
100V
ID
VGS=10V, ID=4.5A
4.5A
55mΩ
VGS=4.5V, ID=3A
58mΩ
RDSON(TYP)
Features
 Low Gate Charge
 Simple Drive Requirement
 Pb-free lead plating package
Symbol
Outline
MTB55N10Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
Ordering Information
Device
MTB55N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25C
Continuous Drain Current @VGS=10V, TA=70C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=4.5A, VGS=20V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation *3
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
4.5
3.6
32 *1
4.5
101
0.5 *2
3.1
2
-55~+150
Unit
Value
20
40 *3
Unit
C/W
C/W
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB55N10Q8
Min.
Typ.
Max.
Unit
Test Conditions
100
1
-
1.4
55
58
15
2.5
±100
1
25
75
80
-
V
V
nA
S
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±20, VDS=0
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=125C
VGS =10V, ID=4.5A
VGS =4.5V, ID=3A
VDS =5V, ID=3A
-
16
1.9
6.7
7
4
20
11
21
2.5
9
15
10
40
25
nC
ID=4.5A, VDS=80V, VGS=10V
ns
VDS=50V, ID=4.5A, VGS=10V,
RG=6Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
662
71
32
860
93
42
-
0.72
30
90
3.5
14
1
-
pF
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 3/9
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
IF=3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
32
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4V
ID, Drain Current (A)
28
VGS=3V
24
20
16
12
8
4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=2V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2V
VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=4.5V
VGS=2.5V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
ID=4.5A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=4.5A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 55mΩ
0
0
0
MTB55N10Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
Coss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
Gate Charge Characteristics
100
10
VDS=80V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VDS=50V
6
4
2
ID=4.5A
0
0.01
0.1
ID, Drain Current(A)
1
10
0
5
10
15
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs JunctionTemperature
Maximum Safe Operating Area
5
100
ID, Maximum Drain Current(A)
4.5
RDSON
Limited
10
ID, Drain Current(A)
20
100μs
1m
1
10ms
100m
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=125°C/W
Single Pulse
0.01
1s
DC
0.001
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=40°C/W
0.5
0
0.1
\
MTB55N10Q8
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
500
32
VDS=5V
28
TJ(MAX) =150°C
TA=25°C
θJA=125°C/W
400
24
Power (W)
ID, Drain Current(A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
20
16
12
8
300
200
100
4
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.01
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
MTB55N10Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB55N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3C/second max.
(Tsmax to Tp)
Preheat
100C
−Temperature Min(TS min)
−Temperature Max(TS max)
150C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
Time within 5C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6C/second max.
6 minutes max.
Time 25 C to peak temperature
Pb-free Assembly
3C/second max.
150C
200C
60-180 seconds
217C
60-150 seconds
260 +0/-5 C
20-40 seconds
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB55N10Q8
CYStek Product Specification
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2015.05.05
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
B55
N10
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB55N10Q8
CYStek Product Specification