CYStech Electronics Corp.

Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode MOSFET
MTP3413SN3
BVDSS
[email protected]=-4.5V, TA=25°C
VGS=-4.5V, ID=-4.3A
RDSON(TYP) VGS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-2A
-20V
-4.9A
39mΩ
51mΩ
75mΩ
Features
• 1.8V gate rated
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP3413SN3
SOT-23
D
G:Gate
S:Source
D:Drain
G
S
Ordering Information
Device
MTP3413SN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP3413SN3
CYStek Product Specification
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V
Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current
(Note 1&2)
Maximum Power Dissipation @TA=25°C
Maximum Power Dissipation @TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
Unit
V
V
A
A
A
Tj, Tstg
Limits
-20
±12
-4.9
-3.9
-35
1.38
0.88
-55~+150
Symbol
Rth,ja
Limit
90
Unit
PD
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient (Note)
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
MTP3413SN3
Min.
Typ.
Max.
-20
-0.4
-
39
-1.0
±100
-1
-10
50
-
51
65
-
75
100
-
1220
103
92
12.5
12
70
20
10
1.9
2.7
-
Unit
V
nA
µA
mΩ
Test Conditions
VGS=0V, ID=-250µA
VDS=VGS, ID=-250µA
VGS=±12V, VDS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, Tj=55°C
VGS=-4.5V, ID=-4.3A
VGS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-2.0A
pF
VDS=-10V, VGS=0V, f=1MHz
ns
VDS=-10V, ID=-1A, VGS=-4.5V, RD=10Ω,
RG=6Ω
nC
VDS=-10V, ID=-4.3A, VGS=-4.5V
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
*ISD
*ISM
*VSD
*trr
*Qrr
-
-0.76
23
8.5
-1.3
-35
-1
-
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 3/9
A
V
ns
nC
VGS=0V, IS=-1.3A
IS=-1.3A, VGS=0V, dI/dt=100A/µs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Recommended Soldering Footprint
MTP3413SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
-BVDSS, Drain-Source Breakdown Voltage
(V)
-ID, Drain Current (A)
20
5V
4.5V
4V
3.5V
3V
2.5V
15
-VGS=1.8V
10
-VGS=1.5V
5
30
28
26
24
22
ID=-250μA,
VGS=0V
20
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=-1.8V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2.5V
100
VGS=-4.5V
10
0.001
0.01
VGS=-10V
0.1
-ID, Drain Current(A)
1
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
140
120
ID=-4.3A
ID=-2.5A
ID=-0.2A
40
20
2
10
4
6
8
-IDR, Reverse Drain Current (A)
VGS=-1.8V, ID=-2A
90
80
70
60
VGS=-2.5V, ID=-2.5A
50
40
30
VGS=-4.5V, ID=-4.3A
20
0
0
MTP3413SN3
0.4
100
160
60
Tj=150°C
0.6
Drain-Source On-State Resistance vs Junction Tempearture
180
80
Tj=25°C
0.8
10
200
100
VGS=0V
1
0.2
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
0.8
-VGS(th) ,Threshold Voltage-(V)
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=-250μA
0.7
0.6
0.5
0.4
0.3
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
10
1
0.1
VDS=-10V
Pulsed
Ta=25°C
0.01
0.001
8
VDS=-10V
ID=-4.3A
6
4
2
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10 12 14
Qg, Total Gate Charge(nC)
16
18
Maximum Drain Current vs JunctionTemperature
100
6
10
ID, Maximum Drain Current(A)
10μs
-ID, Drain Current (A)
20 40
Gate Charge Characteristics
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
100μs
1ms
1
10ms
100ms
DC
0.1
TA=25°C, Tj=150°C
VGS=-4.5V
Single Pulse
0.01
5
4
3
2
1
TA=25°C, VGS=-4.5V
0
0.01
MTP3413SN3
0
Tj, Junction Temperature(°C)
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 6/9
Typical Characteristics(Cont.)
Power Derating Curve
1.6
PD, Power Dissipation(W)
1.4
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=270 °C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP3413SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP3413SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP3413SN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2015.03.30
Page No. : 9/9
SOT-23 Dimension
Marking:
A
L
3
B
TE●
13
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Gate 2.Source 3.Drain
D
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
K
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
J
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP3413SN3
CYStek Product Specification