MTE50N15FP

Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 1/ 8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE50N15FP
BVDSS
ID
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=7V, ID=10A
150V
24A
39 mΩ(typ)
39 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
Outline
MTE50N15FP
TO-220FP
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTE50N15FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE50N15FP
CYStek Product Specification
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.2mH, ID=10 Amps,
VDD=50V
(Note 2)
TC=25°C
(Note 1)
TC=100°C
(Note 1)
Power Dissipation
TA=25°C
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
IDM
IAR
150
±30
24*
17*
4.3
3.6
100*
10
EAS
10
mJ
75
37.5
2
1.3
W
ID
IDSM
PD
PDSM
TL
300
TPKG
260
Tj, Tstg
-55~+175
Unit
V
A
°C
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
RθJC
RθJA
Value
2
62.5
Unit
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTE50N15FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
150
2.0
-
0.1
3.5
30
39
39
4.0
±100
1
25
50
55
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±30V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
VGS =7V, ID=10A
43
10
14
18
13
50
22
1763
170
90
2
-
0.79
100
340
24
100
1.2
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
mΩ
nC
ID=20A, VDS=80V, VGS=10V
ns
VDS=75V, ID=1A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
VGS=0, IF=20A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE50N15FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 4/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
100
ID, Drain Current(A)
10V, 9V, 8V, 7V
80
60
VGS=6V
40
1.2
1
0.8
ID=250μA,
VGS=0V
20
VGS=5V
0.6
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=7V
VGS=10V
100
10
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
10
ID, Drain Current(A)
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
180
ID=20A
160
140
120
100
80
60
40
20
VGS=10V, ID=20A
2
1.6
1.2
0.8
RDS(ON) @ Tj=25°C : 39mΩ typ.
0.4
0
0
MTE50N15FP
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
Gate Charge Characteristics
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
10
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
VDS=80V
ID=20A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15 20 25 30 35 40
Total Gate Charge---Qg(nC)
45
50
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
1000
30
100
ID, Maximum Drain Current(A)
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
10μs
RDS(ON)
Limit
100μs
1ms
10
10ms
100ms
1
TC=25°C, Tj=175°, VGS=10V
RθJC=2°C/W, Single Pulse
DC
25
20
15
10
5
VGS=10V, RθJC=2°C/W
0
0.1
0.1
MTE50N15FP
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
3000
100
VDS=10V
2500
Power (W)
ID, Drain Current (A)
80
60
40
TJ(MAX) =175°C
TC=25°C
θJC=2°C/W
2000
1500
1000
20
500
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
7
8
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTE50N15FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE50N15FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C931FP
Issued Date : 2013.12.06
Revised Date :
Page No. : 8/ 8
TO-220FP Dimension
Marking:
Device Name
E50
N15
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE50N15FP
CYStek Product Specification