MTB55A03KQ8

CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB55A03KQ8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• ESD Protected
• Pb-free & Halogen-free package
Symbol
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=3.5A
RDS(ON)@VGS=4.5V, ID=3.5A
RDS(ON)@VGS=4V, ID=3.5A
30V
4.9A
3.9A
29 mΩ(typ)
52 mΩ(typ)
62 mΩ(typ)
Outline
MTB55A03KQ8
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB55A03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB55A03KQ8
CYStek Product Specification
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 2)
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
TA=25°C, VGS=10V
TA=70°C, VGS=10V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=2mH, ID=4.9A, RG=25Ω
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
Operating Junction and Storage Temperature
Tj, Tstg
Limits
30
±20
4.9
3.9
20
4.9
24
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single
operation
Symbol
Rth,j-c
Rth,j-a
Value
40
62.5
78
135
Unit
(Note 2)
°C/W
(Note 3)
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in2 pad of 2 oz copper, t≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
MTB55A03KQ8
Min.
Typ.
Max.
30
1.0
-
3.5
29
52
62
2.5
±10
1
5
38
70
85
-
4.2
1.5
1.6
383
62
51
-
Unit
V
S
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=3.5A
VGS=±20V
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
VGS =10V, ID=3.5A
VGS =4.5V, ID=3.5A
VGS =4V, ID=3.5A
nC
ID=5A, VDS=15V, VGS=5V
pF
VGS=0V, VDS=10V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 3/9
Characteristics (Cont. Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
5.4
tr
19
*1, 2
ns
td(OFF) *1, 2
16.6
tf *1, 2
5.4
0.7
Ω
Rg
Source-Drain Diode Ratings and Characteristics
IS *1
1.6
A
ISM *3
6.4
VSD *1
0.92
1.2
V
trr
7.5
ns
Qrr
3.4
nC
Test Conditions
VDS=15V, ID=2.5A, VGS=10V,
RG=10Ω
f=1MHz
IS=6.4A, VGS=0V
IF=6.4A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB55A03KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
20
18
ID, Drain Current (A)
16
BVDSS, Normalized Drain-Source
Breakdown Voltage
VGS=5V
10V,9V,8V,7V,6V
14
VGS=4.5V
12
10
VGS=4V
8
6
4
VGS=3.5V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
2
0.4
0
0
1
2
3
4
-75 -50 -25
5
VDS, Drain-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
Tj=25°C
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=4V
4.5V
10V
100
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(on), Normalized Static DrainSource On-State Resistance
600
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=3.5A
500
400
300
200
100
VGS=10V, ID=3.5A
2
1.6
1.2
0.8
VGS=4.5V, ID=3.5A
0.4
0
0
MTB55A03KQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=10V
Ta=25°C
Pulsed
0.01
0.001
8
6
4
2
0.01
0.1
1
ID, Drain Current(A)
0
10
1ms
10ms
100ms
TA=25°C, Tj=150°C
VGS=10V, RθJA=78°C/W
Single Pulse
1s
DC
10
5
4
3
2
1
TA=25°C, VGS=10V, RθJA=78°C/W
0
0.01
MTB55A03KQ8
ID, Maximum Drain Current(A)
RDSON
Limite
1
0.01
4
6
8
Qg, Total Gate Charge(nC)
6
100μ s
0.1
2
Maximum Drain Current vs Junction Temperature
100
10
VDS=15V
ID=5A
0
Maximum Safe Operating Area
ID, Drain Current(A)
0
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
50
VDS=10V
18
16
TJ(MAX) =150°C
TA=25°C
θ JA=78°C/W
40
14
12
Power (W)
ID, Drain Current(A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
30
20
6
4
10
2
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.RθJA=78°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB55A03KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB55A03KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB55A03KQ8
CYStek Product Specification
Spec. No. : C723Q8
Issued Date : 2015.04.27
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
B55A
03K
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB55A03KQ8
CYStek Product Specification