MTD120C10KQ8

Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 1/12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTD120C10KQ8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free lead plating and halogen-free package
Equivalent Circuit
N-CH
100V
2.4A
3.4A
124mΩ
132mΩ
BVDSS
ID @ TA=25°C, GS=10V(-10V)
ID @ TC=25°C, GS=10V(-10V)
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
P-CH
-100V
-2.8A
-3.9A
102mΩ
122mΩ
Outline
MTD120C10KQ8
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTD120C10KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
Continuous Drain Current
VGS
TC=25 °C, VGS=10V (-10V)
ID
TC=100 °C, VGS=10V (-10V)
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2) TA=70 °C, VGS=10V (-10V)
IDSM
Pulsed Drain Current (Note 1)
IDM
Power Dissipation for Dual Operation, TC=25°C
PD
Power Dissipation for Dual Operation, TC=100°C
Limits
N-channel
P-channel
100
-100
±20
±20
3.4
-3.9
2.1
-2.5
2.4
-2.8
1.9
-2.2
12
-14
A
1.2
2
Power Dissipation for Dual Operation, TA=70°C
1.3
PDSM
V
3.1
Power Dissipation for Dual Operation, TA=25°C
Power Dissipation for Single Operation, TA=25°C
Unit
1.6 (Note 2)
W
0.9 (Note 3)
1.0 (Note 2)
Power Dissipation for Single Operation, TA=25°C
0.6 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
100
1.0
-
1.5
124
132
5.9
2.5
±10
1
25
150
160
-
V
V
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
MTD120C10KQ8
μA
mΩ
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=80V, VGS=0V
VDS=70V, VGS=0V, Tj=125°C
ID=2A, VGS=10V
ID=1.5A, VGS=4.5V
VDS=10V, ID=2A
CYStek Product Specification
CYStech Electronics Corp.
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*IS
*ISM
-
306
42
16
6
7
29
13
9
1
2.6
-
-
0.79
-
1.3
2.4
-
-
12
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 3/12
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=80V, ID=2.4A, VGS=10V
V
VGS=0V, IS=2A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-100
-1.0
-
-1.9
102
122
6.7
-2.5
±10
-1
-25
130
150
-
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*IS
-
1243
126
59
22
10
45
16
25
3.4
7.7
-
-
-0.75
-
-1.3
-2.8
*ISM
-
-
-14
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-80V, VGS=0V
VDS=-70V, VGS=0V, Tj=125°C
ID=-2A, VGS=-10V
ID=-1.5A, VGS=-4.5V
VDS=-10V, ID=-2A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-80V, ID=-2.8A, VGS=-10V
V
VGS=0V, IS=-2A
V
μA
mΩ
Dynamic
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTD120C10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
5V
4V
ID, Drain Current (A)
10
8
6
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
12
VGS=3V
4
1.2
1
0.8
ID=250μA,
VGS=0V
2
0.6
0
0
1
-75 -50 -25
5
2
3
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=4.5V
VGS=10V
1000
VGS=2.5V
VGS=3V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
280
R DS(on), Normalized Static DrainSource On-State Resistance
320
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=2A
240
200
160
120
80
VGS=10V, ID=2A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 124 mΩ typ.
0.4
40
0
MTD120C10KQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 5/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VDS=50V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
8
VDS=80V
6
4
2
ID=2.4A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
Qg, Total Gate Charge(nC)
10
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3
RDSON
Limited
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj=150°C
VGS=10V, θJA=78°C/W
Single Pulse
0.01
DC
2.5
2
1.5
1
TA=25°C
VGS=10V
RθJA=78°C/W
0.5
0
0.001
0.1
MTD120C10KQ8
1
10
100
VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
12
1000
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
VDS=10V
TJ(MAX) =150°C
TA=25°C
θJA=78°C/W
100
8
Power (W)
ID, Drain Current(A)
10
6
10
4
1
2
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0.1
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTD120C10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 7/12
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
12
-ID, Drain Current (A)
1.4
10V
9V
8V
7V
6V
5V
10
8
-BVDSS, Normalized Drain-Source
Breakdown Voltage
14
4V
6
-VGS=3V
4
1.2
1
0.8
-ID=250μA,
VGS=0V
2
0.6
0
0
1
-75 -50 -25
5
2
3
4
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1000
-VGS=3V
-VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
-VGS=4.5V
-VGS=10V
100
10
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
-IDR, Reverse Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
360
R DS(on), Normalized Static DrainSource On-State Resistance
400
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-ID=2A
320
280
240
200
160
120
80
-VGS=10V, -ID=2A
1.8
1.6
1.4
1.2
1
0.8
RDSON@Tj=125°C : 102mΩ typ.
0.6
0.4
40
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 8/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
-ID=1mA
1
0.8
0.6
-ID=250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
-VDS=10V
Pulsed
Ta=25°C
0.1
VDS=-50V
8
VDS=-80V
6
4
2
ID=-2.8A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
20
Qg, Total Gate Charge(nC)
24
28
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3.5
RDSON
Limited
10
-ID, Maximum Drain Current(A)
100
-ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj=150°C
VGS=10V, θJA=78°C/W
Single Pulse
0.01
DC
3
2.5
2
1.5
TA=25°C
-VGS=10V
RθJA=78°C/W
1
0.5
0
0.001
0.1
MTD120C10KQ8
1
10
100
-VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 9/12
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
12
1000
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
-VDS=10V
10
TJ(MAX) =150°C
TA=25°C
θJA=78°C/W
-ID, Drain Current(A)
100
Power (W)
8
6
10
4
1
2
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0.1
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
02
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.RθJA=78°C/W
0.1
0.05
0.01
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTD120C10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTD120C10KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
D120
C10K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD120C10KQ8
CYStek Product Specification