MTDP9933KQ8

Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
Dual P-Channel Enhancement Mode Power MOSFET
MTDP9933KQ8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
• ESD protected device
Equivalent Circuit
BVDSS
ID@VGS=-4.5V, TA=25°C
ID@VGS=-4.5V, TC=25°C
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-2.5V, ID=-4A
RDSON@VGS=-1.8V, ID=-2A
-20V
-4.5A
-7.5A
28 mΩ(typ)
36 mΩ(typ)
44 mΩ(typ)
Outline
MTDP9933KQ8
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTDP9933KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-4.5V
Continuous Drain Current @ TC=100°C, VGS=-4.5V
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Continuous Drain Current @ TA=70°C, VGS=-4.5V
Pulsed Drain Current
TC=25℃
TC=100℃
Total Power Dissipation
TA=25°C
TA=70°C
10s
Steady State
VDS
VGS
(Note1)
(Note2)
IDSM
(Note2)
IDM
(Note3)
(Note1)
PD
(Note1)
(Note2)
PDSM
(Note2)
Operating Junction and Storage Temperature Range
-20
±8
-7.5
-4.7
ID
(Note1)
Tj, Tstg
Unit
-6.0
-4.8
V
A
-4.5
-3.6
-40 *1,2
3.1
1.2
2.0
1.1
1.3
0.7
-55~+150
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
(Note2)
Symbol
Rth,j-c
t≤10s
Steady State
Rth,j-a
Typical Maximum
34
40
58
62.5
91
110
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
GFS
MTDP9933KQ8
(Note 1)
(Note 1)
-20
-0.3
-
28
36
44
30
-0.9
±10
-1
-5
38
48
62
-
V
μA
mΩ
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0, Tj=55°C
ID=-4A, VGS=-4.5V
ID=-4A, VGS=-2.5V
ID=-2A, VGS=-1.8V
VDS=-5V, ID=-3A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 3/9
Dynamic
Ciss
Coss
Crss
td(ON) (Note 1&2)
tr
(Note 1&2)
td(OFF) (Note 1&2)
tf
(Note 1&2)
Qg (Note 1&2)
Qgs (Note 1&2)
Qgd (Note 1&2)
Rg
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
-
828
134
127
4.2
23.6
54.6
28.8
10.6
1.2
3.9
5.8
1242
201
191
6.3
35.4
81.9
43.2
15.9
-
-
-0.76
22.3
4.4
-1.7
-10
-1
-
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDS=-5V, ID=-0.5A, VGS=-4.5V,
RG=6Ω
nC
VDS=-10V, ID=-3.8A, VGS=-4.5V
Ω
f=1MHz
A
V
ns
nC
IS=-1A, VGS=0V
IF=-1.3A, dIF/dt=100A/μs
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
40
-I D, Drain Current(A)
35
-VGS=2.5V
30
10V,9V,8V,7V,6V,5V,4V,3V
25
-VGS=2V
20
15
10
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=1.5V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=-1.8V
VGS=-2.5V
VGS=-3V
VGS=-4.5V
-VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
400
360
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-4A
320
280
240
200
160
120
80
40
1.8
VGS=-4.5V, ID=-4A
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 28mΩtyp.
0.4
0.2
0
0
MTDP9933KQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.6
1.4
1.2
ID=-1mA
1
0.8
0.6
0.4
ID=-250uA
0.2
0
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
5
100
10
-VGS, Gate-Source Voltage(V)
-I D, Drain Current (A)
100μ s
RDSON
limited
1ms
10ms
100ms
1
1s
0.1
TA=25°C, Tj=150°C
VGS=-4.5V, RθJA=62.5°C/W
Single Pulse
DC
4
3
2
VDS=-10V
ID=-3.8A
1
0
0.01
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
0
100
4
6
8
Qg, Total Gate Charge(nC)
10
12
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Junction Temperature
100
GFS, Forward Transfer Admittance(S)
8
-I D, Maximum Drain Current(A)
2
7
6
5
4
3
2
1
TA=25°C, VGS=-4.5V, RθJA=62.5°C/W
0
25
MTDP9933KQ8
50
75
100
125
150
Tj, Junction Temperature(°C)
175
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
300
40
VDS=-5V
TJ(MAX) =150°C
TA=25°C
θ JA=62.5°C/W
250
30
Power (W)
-I D, Drain Current(A)
35
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
25
20
15
200
150
100
10
50
5
0
0
1
2
3
-VGS, Gate-Source Voltage(V)
4
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=62.5°C/W
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTDP9933KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTDP9933KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
DP
9933K
Date Code
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP9933KQ8
CYStek Product Specification